2015 IEEE International Reliability Physics Symposium 2015
DOI: 10.1109/irps.2015.7112833
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New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

Abstract: A thorough investigation and statistical analysis of the low-frequency (LFN) and random telegraph noise (RTN) in 28 and 14nm FD-SOI CMOS transistors is presented, for the first time. It is shown that the 14nm technology node is improved in terms of threshold voltage fluctuations when compared to the 28nm one. A new analysis method that directly probes the RTN presence is also proposed. Finally, the LFN/RTN impact on the device dynamic variability is presented through CADENCE design suite circuit simulations.

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Cited by 12 publications
(1 citation statement)
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“…Noise is a stochastic signal and unpredictable, therefore it is necessary to use statistical methods to analyze its behavior. Any tentative to understand the random behavior of the underlying phenomenon can allow to undertake further improvements, see [4,5] and [6], among others. One interesting investigation line is to analyze the problem from a statistical perspective and in this sense the study of potential correlations between the switching threshold voltage and noise characteristics is of great importance, as considered in [7], and yet it has received little attention in the current literature.…”
Section: Introductionmentioning
confidence: 99%
“…Noise is a stochastic signal and unpredictable, therefore it is necessary to use statistical methods to analyze its behavior. Any tentative to understand the random behavior of the underlying phenomenon can allow to undertake further improvements, see [4,5] and [6], among others. One interesting investigation line is to analyze the problem from a statistical perspective and in this sense the study of potential correlations between the switching threshold voltage and noise characteristics is of great importance, as considered in [7], and yet it has received little attention in the current literature.…”
Section: Introductionmentioning
confidence: 99%