Noise in Nanoscale Semiconductor Devices 2020
DOI: 10.1007/978-3-030-37500-3_14
|View full text |Cite
|
Sign up to set email alerts
|

Advanced Characterization and Analysis of Random Telegraph Noise in CMOS Devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
2
1
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(4 citation statements)
references
References 46 publications
0
4
0
Order By: Relevance
“…RTN is the fluctuation of the signal between discrete levels as a consequence of the capture and emission of charges by defects or traps located very close to the Si-SiO 2 interface (Uren et al 1985). In scaled CMOS detectors, this trapping process causes a shift in the relation between the drain current of the MOS transistor and the gate voltage, discretely increasing or decreasing the offset level, which fluctuates as random trapping and de-trapping of charges, either electrons or holes (Martin-Martinez et al 2020).…”
Section: Bias Stability and 'Salt And Pepper' Effectmentioning
confidence: 99%
“…RTN is the fluctuation of the signal between discrete levels as a consequence of the capture and emission of charges by defects or traps located very close to the Si-SiO 2 interface (Uren et al 1985). In scaled CMOS detectors, this trapping process causes a shift in the relation between the drain current of the MOS transistor and the gate voltage, discretely increasing or decreasing the offset level, which fluctuates as random trapping and de-trapping of charges, either electrons or holes (Martin-Martinez et al 2020).…”
Section: Bias Stability and 'Salt And Pepper' Effectmentioning
confidence: 99%
“…The RTN phenomenon in MOSFETs and the various characterization methods are discussed in more detail in Chapters 4 [53],7 [54],14 [55] and 18 [56] of this book.…”
Section: Random Telegraph Noise (Rtn)mentioning
confidence: 99%
“…RTN is the fluctuation of the signal between discrete levels as a consequence of the capture and emission of charges by defects or traps located very close to the Si-SiO 2 interface (Uren et al 1985). In scaled CMOS detectors, this trapping process causes a shift in the relationship between the drain current of the MOS transistor and the gate voltage, discretely increasing or decreasing the offset level, which fluctuates as random trapping and de-trapping of charges, either electrons or holes (Martin-Martinez et al 2020).…”
Section: Bias Stability and "Salt And Pepper" Effectmentioning
confidence: 99%