2002
DOI: 10.1088/0953-8984/14/44/412
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New insights into selected-area deposition of diamond films by means of selective seeding

Abstract: Polycrystalline diamond films have been patterned on a polished Si substrate by means of selective seeding via hot-filament chemical vapour deposition. In addition to the process of selective seeding, the CH4/H2 concentration and the sizes of the patterns have effects on the selectivity. The mechanism of selective growth of diamond is also discussed in this paper.

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Cited by 8 publications
(8 citation statements)
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“…The first relies on the seeding of a substrate on which the selective removal of the nanodiamond has been performed. 172 For instance, the patterning of the nanodiamonds can be achieved by a plasma etching of unwanted nanoparticles through the protection of an aluminum hard mask deposited by lithography. 173 Babchenko et al described a technique in which patterning of the seeds is obtained through the wet chemical removal of nanodiamonds with a SiO 2 layer on pre-defined areas by a buffer oxide etchant.…”
Section: Patternedmentioning
confidence: 99%
“…The first relies on the seeding of a substrate on which the selective removal of the nanodiamond has been performed. 172 For instance, the patterning of the nanodiamonds can be achieved by a plasma etching of unwanted nanoparticles through the protection of an aluminum hard mask deposited by lithography. 173 Babchenko et al described a technique in which patterning of the seeds is obtained through the wet chemical removal of nanodiamonds with a SiO 2 layer on pre-defined areas by a buffer oxide etchant.…”
Section: Patternedmentioning
confidence: 99%
“…The SAD growth of diamond structures has been achieved using several treatment techniques such as the removal of the diamond nuclei (seeds) from defi ned areas (Hirabayashi et al , 1988;Liu et al , 2002), bias enhanced diamond nucleation process on pre-defi ned areas Sakamoto et al , 1998), the direct 'printing' of diamond seeds onto the selected area by ink-jet printing (Fox et al , 2000) or wet chemical etching of SiO 2 on selected areas by buffer oxide etchant (Kromka et al , 2009d). Common limitations of the above mentioned treatments are either aggressive wet chemistries or the need for a specifi c type of substrate material.…”
Section: Polymer/ultra-dispersed Diamond (Udd) Heterostructuresmentioning
confidence: 99%
“…13 At the same time, diamond is used in numerous industrial fields. As a consequence, various diamond structuring strategies have been developed to fit specific requirements, 46 e.g., large surface areas, geometrically ordered microstripes or meshes, 7 nano-objects or nanostructures (wires, rods, and whiskers), 8,9 porous films and membranes, 10,11 etc.…”
Section: Introductionmentioning
confidence: 99%