New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement

Ma, Z.J.; Liu, Z.H.; Cheng, Yung‐Chen; Ko, P.K.; Hu, Chenming

doi:10.1109/16.333842

Cited by 39 publications

(15 citation statements)

References 16 publications

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“…2. The corresponding V T 's are $0.5-0.6 V. This kind of cross-over nature was earlier observed by Ma et al [14], in nitrided SiO 2 devices. In their case, they observed the cross-over at gate voltages of $4 V with corresponding cross-over values of mobility also.…”

Section: Resultsmentioning

confidence: 61%

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Srinivasan

Crupi

Simoen

et al. 2007

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 61%

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Srinivasan

Crupi

Simoen

et al. 2007

Microelectronics Reliability

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“…For example for the case SiON/HfSiON (SiON thermally nitrided) which exhibits significant Dit generation but also high initial Dit0 value (Figure 9), XPS analysis reveals a nitrogen concentration of ~4% in the SiO2 interlayer ( Figure 10) The peak located at 398.2eV is due to the N-(Si) 3 bonds in an oxygen rich matrix. Mobility Degradation with Increased Nitrogen Concentration and Link to NBTI For classical Poly/SiON technologies, it is well known that N at the SiON/Si interface degrades the mobility at low vertical electric field and enhances it at high electric field (13). This must be carefully optimized and put in balance with two improvements which are the reduction of Boron diffusion of P+-polysilicon and the reduction of tunnel current.…”

Section: Resultsmentioning

confidence: 96%

Universal Correlation Between Mobility and NBTI on Advanced High-k/Metal Gate Stacks

Reimbold¹,

Garros²,

Cassé³

et al. 2008

ECS Trans.

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Negative Bias Temperature Instabilities (NBTI) and mobility were extensively studied on a wide range of technological options for advanced CMOS gate stack technologies including pure HfO 2 , silicates, nitrided silicates, HfZr compounds; metal gates included TiN, TaN, TaC, WN with various deposition modes and thicknesses; bottom oxide was pure SiO 2 or SiON. The effect of Nitrogen on the two main components of NBTI, fast reversible and slow, is first investigated. Then we show that NBTI and mobility show extensive process variations leading in worst case to bad drivability and reliability. The cause was clearly identified as the Nitrogen incorporated in the stack with cumulative effects with the various process steps. The importance of metal gate is particularly emphasized. By controlling the amount of N in the layers, it is possible to obtain a mobility close to 100% of the universal SiO 2 mobility as well as a good reliability.

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“…This relationship is approximately followed by chips with the same gate-oxide process, but for wafers of varying nitrogen concentration, the change in saturated current is less than that of the linear current. This is because the low-field mobility is degraded, while the high-field mobility degrades less or even increases with increasing nitrogen concentration [30]. Therefore, although the linear current is halved by the addition of a large amount of nitrogen, the saturated current is degraded by a much smaller fraction.…”

Section: Device Designmentioning

confidence: 95%

“…The advantages in hot-electron immunity have been known for several years [18 -20], and the benefits of suppressing boron penetration of gate oxide have been well documented [22,23]. The incorporation of nitrogen also degrades low-field electron mobility [8], increases high-field electron mobility [30], improves charge to breakdown [24 -27, 35], and increases fixed positive charge [28,29].…”

Section: Introductionmentioning

confidence: 99%

Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations

1999

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Device characteristics and reliability in a 3.3-V logic CMOS technology with various gate oxidation and nitridation processes are described. The technology was designed to extend 3.3-V devices to the ultimate dielectric reliability limit while maintaining strict manufacturing cost control. A nitrided gate oxide provided the means to maintain hotelectron reliability at the level of the previous iteration, but at higher performance and lower processing cost. Conventional furnace processes in nitrous and nitric oxide, highpressure oxidation in oxygen and nitrous oxide, and rapid-thermal processes using nitrous and nitric oxide were investigated. We found that the concomitant variations in fixed charge and thermal budget have a significant influence on both n-FET and p-FET device parameters such as threshold voltage, carrier mobility, and inverse short-channel effect (ISCE). Reliability effects, such as charge to breakdown (Q BD ), hot-electron degradation, and negative-bias temperature instability (NBTI) were examined and correlated with the nitrogen profile in the gate dielectric. Secondary ion mass spectroscopy (SIMS) profiles were used to characterize the oxidation techniques and to correlate gate dielectric composition to the parametric and reliability parameters.

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New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement

Cited by 39 publications

References 16 publications

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Universal Correlation Between Mobility and NBTI on Advanced High-k/Metal Gate Stacks

Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations

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