Abstract:Device characteristics and reliability in a 3.3-V logic CMOS technology with various gate oxidation and nitridation processes are described. The technology was designed to extend 3.3-V devices to the ultimate dielectric reliability limit while maintaining strict manufacturing cost control. A nitrided gate oxide provided the means to maintain hotelectron reliability at the level of the previous iteration, but at higher performance and lower processing cost. Conventional furnace processes in nitrous and nitric o… Show more
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