New Heterostructures n-PbS/n-ZnSe: Long-Term Stability of Electrical Characteristics

Optoelectronic Properties of ZnSe, ITO, TiO2 and ZnO Thin Films

“…6a. We obtained a straight line by plotting a curve between 1/C 2 versus V, which implies a similar behaviour for an abrupt heterojunction (Khlyap & Andrukhiv, 1999). The intercept of this plot at 1/C 2 = 0 corresponds to the built-in potential V bi , and is found to be 1.51 V. The value of barrier height (Singh et al, 1993;Pfister et al, 1977) can be calculated from the measured value of V bi .…”

Luminescence of quasi-2DEG in heterostructures based on PbS films

“….. .. LW where K 1 ,, is the transparency coefficient of the potential barrier formed at the interface of the heterostructure depending on the energy spectrum of the surface electron states [2], e is the dielectric constant], A¢ 1 is an electrical area of the investigated sample, L takes care of the sample thickness, W stands for the width of the space-charge region determining from the capacitance-voltage measurements [2] and v.…”

“…Results of electric-field measurements. The electrophysical studies described for the first time in [2].were shown that the heterostructures based on the materials mentioned in the present article are abrupt heterojunctions. The further electric-field measurements (Fig.…”

Smart Heterostructures Based on Solid Solution ZnCdHgTe

“…Capacitance -voltage measurements carried out at 290 K under test signal frequency f = 1 kHz were shown no barrier features for ZnTe/ZnCdHgTe heterostructure. The experimental data obtained from the C-V-measurements have made it possible to estimate some parameters of the heterostructure CdTe/ZnCdHgTe [8]: the space charge region capacitance C ss , widths of the space charge region W 1 (from CdTe side) and W 2 (from ZnCdHgTe side), density and energy spectrum of the charge centers localized at the interface (N ss and E ss , respectively). As one can see, an IR-photosensitivity is observed: diffusion potential changes from 0.20 eV (dark CVC) to 0.50 eV (light) under 0.75 µm light source illumination.…”

“…On the contrary, the heterostructure CdTe/ZnCdHgTe has revealed CVC typical for graded-gap structures with step-like distribution of the charged centers in the space-charge region (Fig.4). The calculation procedure is described in [8]. The experimental data obtained from the C-V-measurements have made it possible to estimate some parameters of the heterostructure CdTe/ZnCdHgTe [8]: the space charge region capacitance C ss , widths of the space charge region W 1 (from CdTe side) and W 2 (from ZnCdHgTe side), density and energy spectrum of the charge centers localized at the interface (N ss and E ss , respectively).…”