Optoelectronic Properties of ZnSe, ITO, TiO2 and ZnO Thin Films

Venkatachalam, S.; Nanjo, Hiroshi; Kawasaki, Koji; Hayashi, Hiromichi; Ebina, Takeo; Mangalaraj, D.

doi:10.5772/18418

Cited by 6 publications

(4 citation statements)

References 37 publications

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“…From the spectra, for the baked sample under O 2 at 400°C (samples no. [4][5][6], visible range transparency of more than 90 % was achieved.…”

Section: Resultsmentioning

confidence: 78%

“…The optoelectronic and structural properties of the ITO thin films are highly dependent on the deposition and baking conditions of the layers, such that any minuscule changes in these conditions result in notable changes in structural and conclusively in optoelectronic properties [5].…”

Section: Resultsmentioning

confidence: 99%

“…Transparent conducting oxides (TCO) are used mainly in optoelectronic applications such as flat panel displays, thin film transistors, electroluminescent devices, solar cells, gas sensors and light emitting diodes [1][2][3][4][5]. The value of electrical conductivity depends on various factors, one of which is the concentration of the dopant incorporated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

Kiyani

Jalili

2014

J Theor Appl Phys

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In this work, tin-doped indium was deposited on a glass substrate via the electron beam evaporation technique. Then, the as-grown thin films were baked in the presence of oxygen at different O 2 flow rates and temperatures inside a furnace to obtain transparent conducting oxide thin film structures. The electrical and optical properties of the layers were investigated, the thickness of all samples was kept at 500 nm and the rate of deposition was set at 0.1 nm min -1 . The best optical and electrical properties were obtained at O 2 flow rate of 1.5 Nl min -1 and temperatures of 500°C where above 90 % optical transparency and B4 9 10 -3 ohm cm -1 electrical resistivity were achieved.

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“…From the spectra, for the baked sample under O 2 at 400°C (samples no. [4][5][6], visible range transparency of more than 90 % was achieved.…”

Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

Kiyani

Jalili

2014

J Theor Appl Phys

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“…In selecting this typical D/M/D, both more exible and less amount of In2O3 has been considered. Simultaneously, it has the advantage that the top layer is similar to ITO, that its various effects have been widely used in optoelectronic applications [20,21]. Different aspects of introducing the simulation are given in Figure 1 (1-1 to 1-6).…”

Section: A 1d Photonic Structurementioning

confidence: 99%

Nano-viewpoint in Modeling and Investigation of the D/M/D Transparent-Conductive Layer

Haidari

2021

Plasmonics

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A transparent-conductive lm (TCF) is widely used in various electro-optical devices. The dielectric/metal/dielectric(D/M/D) as one type of TCF has been highly considered due to more advantages, such as the possibility of selecting different materials and engineering other properties. For pre-fabrication design, it is often modeled with a 1D photonic crystal. This model needs to be improved due to the low thickness of the metal layer. This thin metallic layer leads to a nanostructure instead of a uniform layer. In this study, after proper nanostructure modeling, the 3D-FDTD method was used to simulate different optical properties of the structure. The rst aspect of the importance of the nanostructured model is to address the serious plasmonic resonant losses. They are associated with the complicated metallic form in D/M/D that is not considered in conventional modeling. The simulation results showed that for Ag, plasmonic loss peaks show a wide distribution over the visible. About Al, these peaks show a more signi cant distribution at the beginning of the visible spectrum. In both, plasmonic loss behavior tends to red-shift. About optical transition, Al does not offer a notable advantage over Ag. Due to the intense excitation of plasmonic losses when the metal layer has pores, a layer of entirely connected nanoparticles with the least possible thickness can have the desired properties. The increased rough surface of the dielectric layer due to the nanostructured metallic layer was also modeled.

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