Smart Heterostructures Based on Solid Solution ZnCdHgTe

Abstract

Current -voltage (IVC) and capacitance -voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films Zn x Cd y Hg 1-x-y Te were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 µm. Electric characteristics of the as-grown structures were examined under T = 77 -290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50 -0.65 µm..

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures

“…A 2 B 6 materials [1] (especially, CdTe, ZnTe and their multi-component solid solutions) play an important role in design of optoelectronic active elements and devices for visible and near-IR wavelength range operating in wide temperature range (from 77 to 300 K) and under different extrinsic disturbances, such as the external mechanical influence, various deformations, impacts etc. The presented work reports first results of studies performed for clarifying the effects of mechanical impact modeled by the indentation on important barrier characteristics of heterostructures p-ZnCdHgTe/p-CdTe and metal-semiconductor structures based on CdTe EXPERIMENTAL Quaternary solid solutions ZnCdHgTe grown by modified LPE technology on monocrystalline (111) CdTe substrates were initially proposed as a material alternative to the world-wide used films and single crystals CdHgTe due to improved structural characteristics [2].…”