New experimental approach to the excess carrier transfer in semi-insulating GaAs based on time-resolved photovoltage

Articles you may be interested inStructural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers Photoluminescence microscopy imaging of tensile strained In 1−x Ga x As y P 1−y / InP quantum wells grown by low-pressure metalorganic vapor phase epitaxyWe have investigated in-plane photovoltage ͑IPV͒ and photoluminescence ͑PL͒ in sequentially grown Ga 0.8 In 0.2 As/GaAs and Ga 0.8 In 0.2 N 0.015 As 0.985 /GaAs quantum wells. Temperature, excitation intensity, spectral and time dependent study of the IPV, arising from Fermi level fluctuations along the layers of the double quantum well structure, gives valuable information about the nonradiative centers and hence about the optical quality of the GaInNAs quantum well. It also provides information about the radiative transition energies in all the layers. In order to obtain either the trap activation energies and the detrapping rates of photogenerated carriers in the GaInNAs the IPV results are analyzed in terms of a theoretical model based on random doping fluctuations in nominally undoped multilayer structures. The PL results are analyzed in terms of the band anticrossing model to obtain the electron effective mass from the coupling parameter C NM .

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Photoconductivity and In-Plane Photovoltage Studies in GaInNAs/GaAs Quantum Wells

Mazzucato

Boland‐Thoms

Erol

et al. 2004

Phys. Scr.

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New experimental approach to the excess carrier transfer in semi-insulating GaAs based on time-resolved photovoltage

Abstract: Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semiinsulating GaAs. II. Excess carrier lifetimes and photoconductivity

Cited by 3 publications

References 4 publications

In-plane photovoltage measurements on MBE grown InN

In-plane photovoltage measurements on MBE grown InN

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

Photoconductivity and In-Plane Photovoltage Studies in GaInNAs/GaAs Quantum Wells

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