It is challenging to provide contact measurements of travel in mm-range with nm/sub-nm resolution. It is even more complex to perform such measurements in static regime. In order to respond to the need for a simple, reliable and costeffective tool for contact travel measurements in mm-range with nm/sub-nm resolution, test MEMS sensor with sidewall embedded piezoresistors have been developed. The sensor comprises of two outer members having thickness of 270µm and two symmetrical sets of in-plane compliant elements: differential springs and displacement detection cantilevers, having thickness of 12µm. The MEMS devices have been bonded directly on low-noise amplifier PCB.For detailed characterization of the sensors in mm-travel range, two different experimental setups have been used.Measurements of 0.6 mm travel range at 1nm resolution have been demonstrated experimentally.
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