New class of high-performance PTAT current sources

Nauta, H.C.; Nordholt, E.H.

doi:10.1049/el:19850274

Cited by 35 publications

(3 citation statements)

References 2 publications

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“…The gate terminal of

M_{20}

is connected to vcm and its bulk terminal is connected at its drain in a diode connection fashion generating the voltage vbp that is applied to bulk terminal of the main amplifier PMOS transistors.

M_{19}

is biased by the constant Gm proportional to absolute temperature current source, composed of transistors

M_{13 - 18}

and the off‐chip resistor

R_{1}

, due to its reduced supply voltage sensibility and capability of low voltage operation [8]. For stability purposes the small capacitor

C_{2}

is required.…”

Section: Proposed Low‐voltage Inverter‐based Otamentioning

confidence: 99%

PVT compensated inverter‐based OTA for low‐voltage CT sigma‐delta modulators

Aguirre

Susin

2018

Electron. lett.

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An inverter-based operational transconductance amplifier (OTA) robust to process, voltage and temperature (PVT) variations is proposed in this Letter to enable the design of low-voltage power-efficient continuous-time sigma-delta modulators (CT-SDMs). The proposed OTA significantly reduces the unity gain-bandwidth variation across PVT corners while presenting a DC gain of 41.9 dB at nominal conditions when operated at 0.6 V. The effectiveness of the proposed circuit was verified in a 180 nm CMOS process by transistor-level simulations including PVT variations and mismatch. Also, a 0.6 V third-order CT-SDM is designed to verify the robustness against voltage and temperature variations.

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“…The gate terminal of

M_{20}

is connected to vcm and its bulk terminal is connected at its drain in a diode connection fashion generating the voltage vbp that is applied to bulk terminal of the main amplifier PMOS transistors.

M_{19}

is biased by the constant Gm proportional to absolute temperature current source, composed of transistors

M_{13 - 18}

and the off‐chip resistor

R_{1}

, due to its reduced supply voltage sensibility and capability of low voltage operation [8]. For stability purposes the small capacitor

C_{2}

is required.…”

Section: Proposed Low‐voltage Inverter‐based Otamentioning

confidence: 99%

PVT compensated inverter‐based OTA for low‐voltage CT sigma‐delta modulators

Aguirre

Susin

2018

Electron. lett.

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show abstract

“…Therefore, V ds1 is close to V ds2 , and V ds3 is close to V ds4 regardless of the supply voltage, which improves the supply sensitivity [8]. Capacitor C 1 is added in the simple amplifier to avoid possible oscillation.…”

Section: A Circuit Implementationmentioning

confidence: 99%

A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$

Block

Duarte

et al. 2013

IEEE Trans. Circuits Syst. II

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This brief presents a low-voltage subthreshold MOSFETs-based scattered relative temperature sensor that uses a simple regulated current mirror structure. NMOSFETs in the subthreshold region instead of bipolar junction transistors are used as sensing devices for low voltage purpose. Dynamic element matching is implemented to minimize the errors induced by device mismatches. The 3 × 3 sensor nodes with small size are remotely distributed across the chip, whereas the other parts are centralized and shared. Experimental results show that the minimum analog supply voltage can be 0.45 V from −55 • C to 105 • C in a 90-nm process implementation. The measured 3σ relative inaccuracy was less than ±3.5 • C without any calibration. Furthermore, the multilocation thermal monitoring function has been experimentally demonstrated, and a 2.2 • C/mm on-chip temperature gradient was detected. Compared with our previous design, superior line sensitivity and comparable relative accuracy are realized with simpler circuit implementation.

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“…Proportional to absolute temperature (PTAT) current sources are quite commonly used in mixed signal circuits to reduce thermal dependence. The classical method of implementing PTAT current sources requires the use of bipolar devices and resistors [4,5]. The low-power low-voltage PTAT current source implementation by using metal-oxide semiconductor field-effect transistors (MOSFETs) has been reported in [6][7][8].…”

mentioning

confidence: 99%

Nano‐ampere PTAT current source with temperature inaccuracy <±1°C

Chouhan¹,

Halonen²

2015

Electron. lett.

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The architecture for generating a nano-ampere proportional to absolute temperature (PTAT) current source is proposed. The circuit has been designed and fabricated in a standard 180 nm CMOS technology. Measurements were performed on 10 prototypes in the temperature range of −40 to +85°C. The operating supply voltage of the proposed circuit is 850 mV ± 10%. The measured averaged temperature inaccuracy and the linearity of the proposed architecture is between +0.86/− 0.93°C and +0.69/−0.75%, respectively.Introduction: The on-chip temperature is rising with the increase in power density due to decrease in the feature size [1]. The increase in chip temperature directly affects the performance of mixed signal circuits. Methods such as dynamic voltage scaling [2] are quite common to address this problem in digital circuits, but they are not easily implementable with analogue blocks. Thus, to reduce temperature dependency in analogue blocks, a temperature dependence nullifier or an on-chip temperature sensor required for efficient dynamic thermal management [3]. Proportional to absolute temperature (PTAT) current sources are quite commonly used in mixed signal circuits to reduce thermal dependence. The classical method of implementing PTAT current sources requires the use of bipolar devices and resistors [4,5]. The low-power low-voltage PTAT current source implementation by using metal-oxide semiconductor field-effect transistors (MOSFETs) has been reported in [6][7][8]. The proposed PTAT current source is simple in implementation, is an extension of well-established circuit, consumes less power and is able to provide the moderate temperature accuracy required for on-chip temperature measurement applications.

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New class of high-performance PTAT current sources

Cited by 35 publications

References 2 publications

PVT compensated inverter‐based OTA for low‐voltage CT sigma‐delta modulators

PVT compensated inverter‐based OTA for low‐voltage CT sigma‐delta modulators

A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$

Nano‐ampere PTAT current source with temperature inaccuracy <±1°C

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