Abstract:In this paper, a new characterization methodology of borderless silicon nitride is presented. This material, deposited by a plasmaenhanced chemical vapor deposition process, contains a large charge quantity attributed to K centers. A steady-state capacitancevoltage ͑C-V͒ behavior has been researched, while taking into account charge considerations, electrical field, and time influence. It is achieved by a capacitance vs time at constant voltage experiment after a complete C-V hysteresis used to set up an initi… Show more
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