New arguments to the problem of screening in auger recombination in semiconductors

Ziep, O.; Mocker, M.

doi:10.1002/pssb.2221190134

Cited by 15 publications

(3 citation statements)

References 29 publications

(12 reference statements)

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“…A t higher concentrations it is more probable to find particles in initial states. This means, more recombination channels [14] are switched on provided that corresponding final states are not occupied. Like for first-order Auger recombination the differences of rates and consequently of lifetimes resulting from different doping levels become obliterated with increasing excitation.…”

Section: Results and Comparison With Other Recombination Channelsmentioning

confidence: 99%

Theory of Second‐Order Auger Recombination in Strong Degenerate Small‐Gap Semiconductors Application to PbSSe

Beiler

Mocker

Ziep

1984

Physica Status Solidi (b)

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A theory to estimate the efficiency of second-order Auger processes in strongly degenerate systems (T -+ 0 K) is developed, whereby a parabolic isotropic band structure model is adapted to PbSo.lSeo.9. The calculation of the net recombination rate refers to a range of doping and excitation concentration where first-order Auger processes are strongly reduced or, in the zero temperature limit, are even forbidden. The numerically calculated small-signal lifetime for a semiconductor with the doping concentration N D = lo1' cm-a has the order of magnitude t = 10+ 8. Eine Theorie fur die AbschMzung der Effektivitat von

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Section: Results and Comparison With Other Recombination Channelsmentioning

confidence: 99%

Theory of Second‐Order Auger Recombination in Strong Degenerate Small‐Gap Semiconductors Application to PbSSe

Beiler

Mocker

Ziep

1984

Physica Status Solidi (b)

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“…In the expression (6) for the matrix element we have to include the overlap integrals Β11 ι between the Bloch factors. According to the bulk theory [10] Using (8), an upper estimate of the form faction can be found easily for infinite wells [4]. We finally get a simple result for the matrix element 1W 2D , but not all integrals in (3) can be done analytically.…”

Section: The Activation Energymentioning

confidence: 95%

“…The Coulomb potential has to be screened by the high frequency dielectric constant ε, [8]. A is the in-plane normalisation area and Ω = A .…”

Section: The Activation Energymentioning

confidence: 99%

Auger Recombination in Low-Dimensional PbSnTe Structures

Mocker

Lemke

1991

Acta Phys. Pol. A

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How is the efficiency of Auger recombination in PbSnTe structures influenced by the reduction of dimensionality? Two points are investigated, the variation of matrix elements and of activation energies, respectively. It is shown that the latter one gives the more decisive effect. This effect is strongly anisotropic. Thus, {100)-planes or [100]-directions are favoured to yield large Auger lifetimes for Q2D or Q1D structures, respectively.

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On the Theory of Auger Recombination in Disordered Semiconductors. A Green's Function Approach

Quang

1989

Physica Status Solidi (b)

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A Green's function approach based on the density-operator formalism is developed to calculate the lifetime of Auger recombination in disordered semiconductors, taking explicitly into account translation-symmetry breaking and the contribution of band-tail states. The theory is applied to disordered materials which can be described by the smooth random field model. It is shown that the classical approximation is sufficient to produce the effect of the disorder on Auger recombination processes. Then a general expression for the Auger lifetime is derived in the form of the volume and configuration average of a local lifetime. The influence of the random field is reduced to a modification of the energy conserving &function and the distribution functions of non-equilibrium carriers. The Auger lifetime or recombination rate depends on the mean square of the random potential fluctuation, yl. I n the case of nondegenerate semiconductors, the Auger recombination rate is exponentially enhanced with increasing yl, so that an estimate of the random parameter might be possible from Auger lifetime measurements. As an example, the Auger coefficient for p-type GaSb is evaluated for the case of the random field due to thermal fluctuations of charge carrier concentrations.Es wird ein mit Greenschen Funktionen operierender Zugang zur Berechnung der Lebensdauer der Auger-Rekombination in ungeordneten Halbleitern entwickelt, der auf dem Dichteoperatorenformalismus aufbaut und die Brechung der Translationssymmetrie sowie den Beitrag von Aus-Iauferzustanden explizit berucksichtigt. Die Theorie wird fur solche ungeordneten Materialien angewandt, die durch das Modell des glatten zufalligen Feldes beschrieben werden konnen. Es wird gezeigt, da13 die klassische Naherung fur die Erzeugung des Unordnungseffektes auf Auger-Rekombinationsprozesse ausreichend ist. Dann wird ein allgemeiner Ausdruck fur die Augerlebensdauer in der Form des Volumen-und Konfigurationsmittels einer lokalen Lebensdauer abgeleitet. Der EinfluB des zufalligen Feldes reduziert sich auf eine Modifikation der Energie erhaltenden &Funktion und der Verteilungsfunktionen von Nichtgleichgewichtstragern. Die Augerlebensdauer bzw. -Rekombinationsrate hangt vom mittleren Schwankungsquadrat des zufalligen Potentials, pyl, ab. Fur den Fall nichtentarteter Halbleiter nimmt die Auger-Rekombinationsrate experimentell bei der Erhohung von yl zu, wobei ihre experimentelle Bestimmung eine Abschatzung des zufklligen Parameters liefern konnte. Als ein Beispiel wird der Auger-Koeffizient fur GaSb vom p-Typ fur den Fall des zufalligen Feldes abgeschiitzt, das durch thermische Schwankungen Ton Ladungstriigerkonzentrationen erzeugt wird.

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New arguments to the problem of screening in auger recombination in semiconductors

Cited by 15 publications

References 29 publications

Theory of Second‐Order Auger Recombination in Strong Degenerate Small‐Gap Semiconductors Application to PbSSe

Theory of Second‐Order Auger Recombination in Strong Degenerate Small‐Gap Semiconductors Application to PbSSe

Auger Recombination in Low-Dimensional PbSnTe Structures

On the Theory of Auger Recombination in Disordered Semiconductors. A Green's Function Approach

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