A theory of intrinsic recombination a t zero temperature is developed. Numerical results in a wide range of excitation and doping concentrations are given for a model adapted to PbSo.lSeo.9. In order that first-order Auger recombination is possible a minimum value of majority carrier concentration has to be reached. Consequently, a finite small signal lifetime only exists if doping concen-
A theory to estimate the efficiency of second-order Auger processes in strongly degenerate systems (T -+ 0 K) is developed, whereby a parabolic isotropic band structure model is adapted to PbSo.lSeo.9. The calculation of the net recombination rate refers to a range of doping and excitation concentration where first-order Auger processes are strongly reduced or, in the zero temperature limit, are even forbidden. The numerically calculated small-signal lifetime for a semiconductor with the doping concentration N D = lo1' cm-a has the order of magnitude t = 10+ 8.
Eine Theorie fur die AbschMzung der Effektivitat von
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