New 1200 V MOSFET structure on SOI with SIPOS shielding layer

High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field

“…In these devices, the electric field in the drain buried oxide (BOX) layer is enhanced greatly and breakdown voltage (BV) is mainly supported by the BOX under the drain. Another method is back-gate reduced bulk field (BG REBULF) [5]. BV is supported by the depletion layer and BOX under the drain and source at a proper positive back-gate bias.…”

“…BV is supported by the depletion layer and BOX under the drain and source at a proper positive back-gate bias. However, high positive back-gate voltage weakens the reduced surface field (RESURF) effect, resulting in increase of on-resistance and decrease of BV [5,6].…”

Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer

“…the BV is required to be guaranteed at all temperature ranges for HEV/EV applications. It was reported that the conventional L-Diode with planar Box layer exhibits the second peak of the recovery current at turn off due to the occurrence of the dynamic avalanche phenomenon [3,4,5]. This device operation results in a large switching loss.…”

Improving reliability of beveled power semiconductor devices passivated by SIPOS

“…Semi-insulating polycrystalline silicon (SIPOS) has been used as a surface passivation material to improve the performance of high-voltage planar devices [6][7][8]. As SIPOS is almost electrically neutral and has slight conductivity, it can be used for the surface passivation of p-and n-type silicon without showing the charging phenomenon.…”