Abstract:I present in this talk the latest results of the neutron spin physics program at Jefferson Laboratory in Hall A using the highly polarized electron beam and a high pressure polarized 3 He target. This program includes among others experiment E99-117 in which the neutron spin asymmetry A n 1 was measured in the deep inelastic region with high precision. This asymmetry is observed, for the first time, to change sign from negative to positive values between 0.3 < x < 0.6. Furthermore we perform a flavor decomposi… Show more
“…4), and are showing a good agreement in both curve shape and order of magnitude, for α =0.1. Note that the µeff-Eeff plateau at low effective field has been inferred experimentally by magneto-resistance measurements below threshold [2]. This plateau is not measurable by split C-V technique that is used to obtain universal curves of Fig.…”
Section: N µC Pmentioning
confidence: 85%
“…We used this approach combined together with the model of surface roughness and acoustic phonon limited mobility (described in the MASTAR documentation [2]) to calculate the total effective mobility as a function of the effective field. The result is obtained using a classic Mathiessen's law.…”
By using simple and analytical models, we study the impact of Coulomb scattering on the I-V characteristics and the transient behaviour of MOS transistors and inverters. We predict "anomalous" I-V curve shape in highly doped bulk transistors.
“…4), and are showing a good agreement in both curve shape and order of magnitude, for α =0.1. Note that the µeff-Eeff plateau at low effective field has been inferred experimentally by magneto-resistance measurements below threshold [2]. This plateau is not measurable by split C-V technique that is used to obtain universal curves of Fig.…”
Section: N µC Pmentioning
confidence: 85%
“…We used this approach combined together with the model of surface roughness and acoustic phonon limited mobility (described in the MASTAR documentation [2]) to calculate the total effective mobility as a function of the effective field. The result is obtained using a classic Mathiessen's law.…”
By using simple and analytical models, we study the impact of Coulomb scattering on the I-V characteristics and the transient behaviour of MOS transistors and inverters. We predict "anomalous" I-V curve shape in highly doped bulk transistors.
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