Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

Abstract

By using simple and analytical models, we study the impact of Coulomb scattering on the I-V characteristics and the transient behaviour of MOS transistors and inverters. We predict "anomalous" I-V curve shape in highly doped bulk transistors.

Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs

“…For the effective mobility modelling, we adopt an approach combining, using the Matthiessen rule, a screened Coulomb scattering limited mobility below threshold and a surface roughness limited mobility well above threshold [10] such that µ eff reads as a function of inversion charge where µ C refers to the unscreened Coulomb mobility below threshold and µ 0 to the phonon limited low‐field mobility, θ 2 is the second‐order mobility attenuation coefficient, Q c ≈ kT. C ox /(2 q ) is a critical charge delineating the unscreened Coulomb scattering upper limit, and C ox is the gate oxide capacitance per unit area and kT/q is the thermal voltage.…”

“…For the effective mobility modelling, we adopt an approach combining, using the Matthiessen rule, a screened Coulomb scattering limited mobility below threshold and a surface roughness limited mobility well above threshold [10] such that µ eff reads as a function of inversion charge…”

Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations

“…For the effective mobility modeling, we adopt an approach combining, using the Matthiessen rule, a screened Coulomb scattering limited mobility below threshold and a surface roughness limited mobility well above threshold [87] such that µ eff reads as a function inversion charge,…”

Variability of low frequency fluctuations in sub 45nm CMOS devices-experiment, modeling and applications

“…V gs is the gate-to-source voltage, V ds is the drain-to-source voltage, U c is the quasi-Fermi level shift along the channel, W is the channel width, L the channel length, µ eff the effective mobility depending on the effective electric field, E eff =(Q i +Q d )/ si (0.5 for electrons and 0.33 for holes) through the universal mobility law[91][92] (Q d being the depletion charge). The inversion charge Q i can be calculated using the Lambert W function where kT/q is the thermal voltage, V th is the threshold voltage, n is the subthreshold ideality factor, n=C ox /(C ox +C d ), C ox is the gate oxide capacitance and C d the depletion capacitance.Drain induced barrier lowering effect can be introduced in Eq.…”