Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs

Abstract

The impact of the AC signal oscillator level on the effective mobility measurement by split C-V technique in MOSFETs is investigated. It is found that, due to strong nonlinearity below threshold, the gateto-channel capacitance and, by turn, the channel inversion charge increases linearly with the oscillator level. As a consequence, the extracted effective mobility decreases linearly with the oscillator level, resulting in a huge underestimation of the effective mobility in weak inversion. A physical model explaining these behaviours is developed, which enables to obtain a quantitative description of both inversion charge and effective mobility variations with the oscillator level and the gate voltage.

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

“…where  H0 refers to the intrinsic Hooge parameter, µ ph , µ C and µ SR are respectively the phonon, Coulomb and surface roughness scattering limited mobilities in the MOSFET inversion layer [37]. Accounting for the phonon, Coulomb and surface roughness scattering universal mobility law [37], [38] against effective electric field, the dependence of the Hooge parameter given by Eq. (10) can be evaluated theoretically with the MOSFET inversion charge from weak to strong inversion as illustrated in Figure 2.…”

Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations

“…Another critical point is the choice of the AC signal oscillator level. Thus, we investigated the impact of the AC signal oscillator level on the effective mobility measurement by split C-V technique in MOSFETs [84].…”