The realization of chiral spin textures,
comprising myriad distinct,
nanoscale arrangements of spins with topological properties, has established
pathways for engineering robust, energy-efficient, and scalable elements
for non-volatile nanoelectronics. Particularly, current-induced manipulation
of spin textures in nanowire racetracks and tunnel junction based
devices are actively investigated for applications in memory, logic,
and unconventional computing. In this Article, we paint a background
on the progress of spin textures, as well as the relevant state-of-the-art
techniques used for their development. In particular, we clarify the
competing energy landscape of chiral spin texturesskyrmions
and chiral domain walls, to tune their size, density, and zero-field
stability. Next, we discuss the spin texture phenomenology and their
response to extrinsic factors arising from geometric constraints,
interwire interactions, and thermal-electrical effects. Finally, we
reveal promising chiral spintronic memory and neuromorphic devices
and discuss emerging material and device engineering opportunities.