The realization of chiral spin textures, comprising myriad distinct, nanoscale arrangements of spins with topological properties, has established pathways for engineering robust, energy-efficient, and scalable elements for non-volatile nanoelectronics. Particularly, current-induced manipulation of spin textures in nanowire racetracks and tunnel junction based devices are actively investigated for applications in memory, logic, and unconventional computing. In this Article, we paint a background on the progress of spin textures, as well as the relevant state-of-the-art techniques used for their development. In particular, we clarify the competing energy landscape of chiral spin texturesskyrmions and chiral domain walls, to tune their size, density, and zero-field stability. Next, we discuss the spin texture phenomenology and their response to extrinsic factors arising from geometric constraints, interwire interactions, and thermal-electrical effects. Finally, we reveal promising chiral spintronic memory and neuromorphic devices and discuss emerging material and device engineering opportunities.