Neural oscillation of single silicon nanowire neuron device with no external bias voltage

Abstract

In this study, we perform simulations to demonstrate neural oscillations in a single silicon nanowire neuron device comprising a gated p–n–p–n diode structure with no external bias lines. The neuron device emulates a biological neuron using interlinked positive and negative feedback loops, enabling neural oscillations with a high firing frequency of ~ 8 MHz and a low energy consumption of ~ 4.5 × 10−15 J. The neuron device provides a high integration density and low energy consumption for neuromorphic hardware. The periodic and aperiodic patterns of the neural oscillations depend on the amplitudes of the analog and digital input signals. Furthermore, the device characteristics, energy band diagram, and leaky integrate-and-fire operation of the neuron device are discussed.

Recent Advances in Synaptic Nonvolatile Memory Devices and Compensating Architectural and Algorithmic Methods Toward Fully Integrated Neuromorphic Chips

“…Several researchers have studied the neuronal oscillation behavior and fabricated NVM devices that function as compact oscillation neurons. [ 270,271 ]…”

“…Several researchers have studied the neuronal oscillation behavior and fabricated NVM devices that function as compact oscillation neurons. [270,271] As already mentioned, neuromorphic research is widely inspired by the biological nerve system. Unfavorably, the current achievements do not still meet the requirements of an ideal neuromorphic chip.…”

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

“…Feedback field effect transistors (FBFETs) that operate via positive feedback are promising devices for logic-in-memory computing because they possess both instantaneous switching and memory characteristics [1][2][3][4][5][6]. Recently, their oscillation and spiking characteristics have expanded their application potential to neuron devices [7][8][9]. Moreover, FBFETs with multi-gated p + -i-n + structures can operate as reconfigurable devices by electrostatic doping in the channel regions [10,11].…”

Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

“…Silicon transistors using a positive feedback (PF) loop mechanism have demonstrated neuromorphic computing because of their superior electrical characteristics. [21][22][23][24][25] In particular, PF transistors with multiple-gated structures have recently been proposed as building blocks for reconfigurable electronics. [26][27][28][29] Hence, in this study, a triple-gated transistor with a p + -i-n + silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are implemented in a single transistor.…”