Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Yunwoo Shin,
Jaemin Son,
Juhee Jeon
et al.
Abstract:In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5 mV dec−1 and an ON/OFF current ratio of ≈5 × 106 for both the n‐ and p‐channel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an O… Show more
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