Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Abstract

In this study, we investigate the gate-bias stability of triple-gated feedback field-effect 
transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) of FBFETs 
increases from 0.3 mV/dec to 60 and 80 mV/dec in p- and n-channel modes, respectively, 
when a positive bias stress (PBS) is applied for 1000 s. In contrast, the SS value does not 
change even after a negative bias stress (NBS) is applied for 1000 s. The difference in the 
switching characteristics under PBS and NBS is attributed to the ability of the interface traps
to readily gain electrons from the inversion layer. The switching characteristics deteriorated 
by PBS are completely recovered after annealing at 300 °C for 10 mins, and the
characteristics remain stable even after PBS is applied again for 1000 s.