Negative capacitance at metal-semiconductor interfaces

Wu, Xi; Yang, E.S.; Evans, H. L.

doi:10.1063/1.346442

Cited by 160 publications

(87 citation statements)

References 14 publications

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“…Recently, negative capacitances have been reported on a variety of devices that were based on organic materials [1][2][3][4] or on crystalline or amorphous inorganic semiconductors. [5][6][7][8][9][10][11][12][13][14] Equally numerous explanations for this negative capacitance ͑NC͒ have been presented that involved minority carrier flow, 1,[3][4][5] interface states, 9,13 slow transient time of injected carriers, 14 charge trapping, 2,3,[10][11][12] or space charge. 6 The bulk of these descriptions are either based on phenomenological arguments or based on device representation in an equivalent circuit.…”

Section: Introductionmentioning

confidence: 99%

Negative capacitances in low-mobility solids

2005

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The negative capacitance as often observed at low frequencies in semiconducting devices is explained by bipolar injection in diode configuration. Numerical calculations are performed within the drift-diffusion approximation in the presence of bimolecular recombination of arbitrary strength. Scaling relations for the characteristic frequency with bias, sample dimensions, and carrier mobilities are presented in the limits of weak and strong recombination. Finally, impedance measurements conducted on a light-emitting diode and photovoltaic cell based on low-mobility organic semiconductors are modeled as a function of bias and temperature, respectively.

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Section: Introductionmentioning

confidence: 99%

Negative capacitances in low-mobility solids

2005

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“…3 were observed with increasing forward applied voltage for all frequencies. The physical mechanisms of the negative capacitance in different devices have been associated with the contact injection, interface states or minority-carrier injection [19,20]. Wu et al stated that the negative capacitance can be explained by considering the loss of interface charge at occupied states below the Fermi level due to impact ionization.…”

Section: Resultsmentioning

confidence: 99%

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim¹

2016

Transactions on Electrical and Electronic Materials

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Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

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“…In this case, NC behavior is important because it implies that the increment of bias voltage produces a decrease in the charge on the electrodes [14]. According to Wu, et al [13] the concept of NC can be explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. The physical mechanism of the NC in different devices is different and can be attributed to the contact injection, interface states or minority-carrier injection [9,12,13].…”

Section: Resultsmentioning

confidence: 99%

“…It is known that the existence of an insulator layer, native or deposited at metalsemiconductor (MS) interface, changes the C-V and G/ω characteristics of the diode. Negative capacitance (NC) and anomalous peak have been observed in the forward bias C-V characteristics of MS or MIS SBDs [10][11][12][13][14][15][16][17][18]. The NC has been attributed to the interface states, the contact injection and minority carrier injection effects * corresponding author; e-mail: farukozdemir@sdu.edu.tr and the anomalous peak can occur due to interface states (N ss ) and R s [19,20].…”

Section: Introductionmentioning

confidence: 99%

“…Ideally the C-V and G/ω-V characteristics of Schottky barrier diodes (SBDs) are frequency independent, particularly at high frequency, and show an increase with the increasing forward bias voltage [8][9][10][11][12][13][14]. Deviations from this case can be seen at low and moderate frequencies, in depletion and accumulation regions, due to the contribution of carriers at interface states, interfacial insulator layer and R s of device.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

et al. 2015

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The frequency-dependent electrical characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/ n-GaAs Schottky barrier diodes have been investigated by using capacitance-voltage (C-V ) and conductancevoltage (G/ω-V ) measurements at room temperature. Negative capacitance behavior has been observed in the C-V characteristic for each frequency. The magnitude of absolute value of C was found to increase with decreasing frequency in the forward bias region. The value of G/ω increases with decreasing frequency in the positive region. This can be attributed to the increase in the polarization at low frequencies and to the fact that more carriers are introduced into the structures. Negative capacitance phenomenon can be explained by the loss of interface charges from the occupied states below the Fermi level, caused by impact ionization process. According to obtained result, the values of C and G/ω are strong functions of frequency and applied bias voltage, particularly in the accumulation an inversion region. Doping concentration (N d ), diffusion potential (V d ), Fermi energy level (E f ), and barrier height (Φ b (C-V )) values have been calculated from reverse bias C −2 -V plots for 3 MHz. Finally, the obtained value of Rs in the accumulation region increases with decreasing frequency.

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Negative capacitance at metal-semiconductor interfaces

Cited by 160 publications

References 14 publications

Negative capacitances in low-mobility solids

Negative capacitances in low-mobility solids

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

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