Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells

Schörmann, Jörg; Potthast, S.; As, D. J.; Lischka, K.

doi:10.1063/1.2357587

Cited by 22 publications

(17 citation statements)

References 13 publications

(11 reference statements)

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“…2,3 Especially, the determination of optimal growth conditions for nonpolar c-GaN (Ref. 4) and c-AlN (Ref. 5) has pushed the development of electronic and optoelectronic devices, such as heterojunction field-effect transistors, 6 resonant tunneling diodes, 7 and QWIPs 8 based on zinc-blende group-III nitrides.…”

Section: Introductionmentioning

confidence: 99%

Band offsets in cubic GaN/AlN superlattices

et al. 2011

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The presently unknown band offset in nonpolar cubic GaN/AlN superlattices is investigated by inter-sub-band and interband spectroscopies as well as ab initio calculations. On one hand, the conduction-band offset (CBO) has been determined from the comparison of the measured transition energies with model calculations within the effective mass approximation. On the other hand, the valence-band offset (VBO) and the CBO are accurately simulated by calculating many-body corrections within the GW approximation on top of hybrid-functional density functional theory calculations. Thus, a CBO of (1.4 ± 0.1) eV and a VBO of (0.5 ± 0.1) eV is obtained as a result of both approaches.

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Section: Introductionmentioning

confidence: 99%

Band offsets in cubic GaN/AlN superlattices

et al. 2011

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“…Growth along the polar c-axis leads to strong internal electric fields, which may limit the switching time of devices. The growth of nonpolar cubic group III-nitrides on (001) oriented substrates is a direct way to eliminate these polarization fields [1]. However, the most important feature of high power devices is an n-type conduction channel formed at the heterostructure interface.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of an interface n‐type conduction channel in cubic GaN/AlGaN heterostructures

Zado¹,

Tschumak

Lischka

et al. 2010

Phys. Status Solidi (c)

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We report on the growth of non‐polar cubic GaN/AlxGa1‐xN heterostructures by plasma‐assisted molecular beam epitaxy on free standing (001) 3C‐SiC substrates. The samples consist of 600 nm thick GaN buffer and 30 nm AlxGa1‐xN layer. The growth was observed by in‐situ reflection high energy electron diffraction (RHEED). Layer thickness was determined by AlxGa1‐xN RHEED growth oscillations and by reflectance measurements after growth. The morphological and the structural properties are analyzed by high resolution x‐ray diffraction (HRXRD) and atomic force microscopy (AFM). Using a metal oxide semiconductor heterostructure (MOSH), capacitance voltage (CV) characteristics were measured. The oxide layer consists of SiO2, the thickness was varied between 15 nm and 30 nm. SiO2 layer was produced by plasma enhanced chemical vapour deposition (PECVD). The contact structure is lithographically deposited on top of the sample. Metal contacts have a diameter of 300 μm and were thermally evaporated consisting of 15 nm Ni and 50 nm Au. By CV measurements of the MOSH structures we obtain clear evidence for the existence of an electron accumulation layer at the GaN/AlGaN interface. The sheet carrier concentration at the hetero‐interface is calculated from experimental data (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Carbon doped cubic GaN layers were grown by plasma assisted MBE at 720 °C on free standing, highly conductive 3C-SiC (001) substrates under one monolayer of excess Ga [5]. A 70 nm thick cubic GaN buffer layer was first deposited to adjust the growth conditions, followed by a 550 nm thick GaN:C layer.…”

Section: Methodsmentioning

confidence: 99%

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr[sub 4]

Zado¹,

Tschumak²,

Gerlach³

et al. 2010

AIP Conference Proceedings

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We report on carbon doping of cubic GaN by CBr 4 using plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. The samples consist of a 70 nm thick GaN buffer followed by a 550 nm thick GaN:C layer. Carbon doping is realized with a home-made carbon tetrabromide sublimation source. The CBr 4 beam equivalent pressure was established by a needle valve and was varied between 2x10 -9 mbar and 6x10 -6 mbar. The growth was controlled by in-situ reflection high energy electron diffraction. The incorporated carbon concentration is obtained from secondary ion mass spectroscopy. Capacitance voltage characteristics were measured using metal-insulator-semiconductor structures. Capacitance voltage measurements on nominally undoped cubic GaN showed n-type conductivity with N D -N A =1x10 17 cm -3 . With increasing CBr 4 flux the conductivity type changes to p-type and for the highest CBr 4 flux N A -N D =4.5x10 18 cm -3 was obtained.

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Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells

Cited by 22 publications

References 13 publications

Band offsets in cubic GaN/AlN superlattices

Band offsets in cubic GaN/AlN superlattices

Electrical characterization of an interface n‐type conduction channel in cubic GaN/AlGaN heterostructures

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr[sub 4]

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