Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Ullah, Aman; Carrad, Damon J.; Krogstrup, Peter; Nygård, Jesper; Micolich, A. P.

doi:10.1103/physrevmaterials.2.025601

Cited by 7 publications

(5 citation statements)

References 39 publications

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“…The disadvantage is the difficulty involved in achieving low-resistance ohmic contacts to p-GaAs nanowires. Low-resistance contacts (∼30 kΩ) can be achieved using GaAs nanowires with a heavily Be-doped shell; however, such heavy doping means conventional metal–oxide gating fails . Here we demonstrate that this problem can be overcome by carefully etching the nanowire to reduce the local Be-doping density at the locations where gates are patterned prior to depositing gate metal directly on the nanowire surface.…”

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confidence: 91%

“…Low resistance contacts (∼ 30 kΩ) can be achieved using GaAs nanowires with a heavily Be-doped shell, 28 however, such heavy doping means conventional metal-oxide gating fails. 29 Here we demonstrate that this problem can be overcome by carefully etching the nanowire to reduce the local Be-doping density at the locations where gates are patterned prior to depositing gate metal directly on the nanowire surface. Our approach provides both strong, low-leakage gating and low contact resistance simultaneously.…”

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confidence: 97%

“…The key is then to thin the nanowire and thereby reduce the doping level at the gate location just enough for the channel to become electrostatically gateable in the region where the gates are placed. This requires a careful balance -etch insufficiently and the gate either fails to function 29 and/or leaks current to the nanowire; etch too much and the on-resistance become undesirably high and the on-off ratio falls. 28 Note that it is vital that some doping remains in the etched region to counteract the GaAs surface-states, which pin the Fermi energy at mid-gap, and then provide the free holes required to achieve conduction through the etched channel segment.…”

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confidence: 99%

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p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

et al. 2018

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Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical subthreshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio ∼10, on-resistance ∼700 kΩ, contact resistance ∼30 kΩ, peak transconductance 1.2 μS/μm, and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates while leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.

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confidence: 91%

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confidence: 97%

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confidence: 99%

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p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

et al. 2018

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“…Semiconducting nanowires were demonstrated to be highly appropriate to this aim. [23][24][25][26] Conversely, their reduced lateral dimension may allow them to probe the local ionic density with high spatial resolution thus yielding access to microscopic parameters of interest for the design of novel thermoelectric polyelectrolytes and for material characterization.…”

Section: Introductionmentioning

confidence: 99%

Heat‐Driven Iontronic Nanotransistors

et al. 2023

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Thermoelectric polyelectrolytes are emerging as ideal material platform for self-powered bio-compatible electronic devices and sensors. However, despite the nanoscale nature of the ionic thermodiffusion processes underlying thermoelectric efficiency boost in polyelectrolytes, to date no evidence for direct probing of ionic diffusion on its relevant length and time scale has been reported. This gap is bridged by developing heat-driven hybrid nanotransistors based on InAs nanowires embedded in thermally biased Na + -functionalized (poly)ethyleneoxide, where the semiconducting nanostructure acts as a nanoscale probe sensitive to the local arrangement of the ionic species. The impact of ionic thermoelectric gating on the nanodevice electrical response is addressed, investigating the effect of device architecture, bias configuration and frequency of the heat stimulus, and inferring optimal conditions for the heat-driven nanotransistor operation. Microscopic quantities of the polyelectrolyte such as the ionic diffusion coefficient are extracted from the analysis of hysteretic behaviors rising in the nanodevices. The reported experimental platform enables simultaneously the ionic thermodiffusion and nanoscale resolution, providing a framework for direct estimation of polyelectrolytes microscopic parameters. This may open new routes for heat-driven nanoelectronic applications and boost the rational design of next-generation polymer-based thermoelectric materials.

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“…The effective miniaturization of electronic devices and the consequent reach of the nanoscale [12] combined with the introduction of novel and better-performing gating techniques [13][14][15][16] reintroduce the possibility to exploit electrostatic doping for the electronic nanodevices. Indeed, the electric field acting near the surface of the semiconductor and inducing space charge densities near the boundaries of the material does not represent an issue for nano-sized objects.…”

Section: Introductionmentioning

confidence: 99%

Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires

et al. 2021

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We fabricate dual-gated electric double layer (EDL) field effect transistors based on InAs nanowires gated with an ionic liquid, and we perform electrical transport measurements in the temperature range from room temperature to 4.2 K. By adjusting the spatial distribution of ions inside the ionic liquid employed as gate dielectric, we electrostatically induce doping in the nanostructures under analysis. We extract low-temperature carrier concentration and mobility in very different doping regimes from the analysis of current–voltage characteristics and transconductances measured exploiting global back-gating. In the liquid gate voltage interval from −2 to 2 V, carrier concentration can be enhanced up to two orders of magnitude. Meanwhile, the effect of the ionic accumulation on the nanowire surface turns out to be detrimental to the electron mobility of the semiconductor nanostructure: the electron mobility is quenched irrespectively to the sign of the accumulated ionic species. The reported results shine light on the effective impact on crucial transport parameters of EDL gating in semiconductor nanodevices and they should be considered when designing experiments in which electrostatic doping of semiconductor nanostructures via electrolyte gating is involved.

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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

Cited by 7 publications

References 39 publications

p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Heat‐Driven Iontronic Nanotransistors

Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires

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