Heat‐Driven Iontronic Nanotransistors

Prete, Domenic; Colosimo, Alessia; Demontis, Valeria; Medda, Luca; Zannier, Valentina; Bellucci, Luca; Tozzini, Valentina; Sorba, L.; Beltram, Fabio; Pisignano, Dario; Rossella, Francesco

doi:10.1002/advs.202204120

Cited by 6 publications

(4 citation statements)

References 36 publications

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“…[EMIM + ] [TFSI − ] is commonly used as an electrolyte for ion gate experiments [16,18,32]. It is liquid at room temperature and freezes below 220 K. It has an electrochemical window of 4.7 eV, with an anodic limit of 2.6 eV and a cathodic limit of −2.1 eV [33,34].…”

Section: Resultsmentioning

confidence: 99%

“…In the past few years, the combination of the properties of InAs NWs and the exceptional effectiveness of ion gating has begun to demonstrate its potential [11,17,18]. InAs NWs possess interesting properties, such as the high aspect ratio, and strong spin-orbit coupling [19], which make them promising for a broad range of applications including nanoelectronics [20,21], optoelectronics [22], spintronics [19], sensing [23,24] and quantum technologies [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

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Persistent polarization effects and memory properties in ionic-liquid gated InAs nanowire transistors

Demontis,

Prete,

Faella

et al. 2024

Nano Ex.

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Iontronics exploits mobile ions within electrolytes to control the electronic properties of materials and devices' electrical and optical response. In this frame, ionic liquids are widely exploited for the gating of semiconducting nanostructure devices, offering superior performance compared to conventional dielectric gating. In this work, we engineer ionic liquid gated InAs nanowire-based field effect transistors and adopt the set-and-freeze dual gate device operation to probe the nanowires in several ionic gate regimes. We exploit standard back-gating at 150 K, when the ionic liquid is frozen and any crosstalk between the ionic gate and the back gate is ruled out. We demonstrate that the liquid gate polarization has a persistent effect on the nanowire properties. This effect can be conveniently exploited to fine-tune the properties of the nanowires and enable new device functionalities. Specifically, we correlate the modification of the ionic environment around the nanowire to the transistor threshold voltage and hysteresis, on/off ratio and current level retention times. Based on this, we demonstrate memory operations of the nanowire field effect transistors. Our work shines a new light on the interaction between electrolytes and semiconducting nanostructures, providing useful insights for future applications of nanodevice iontronics.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Persistent polarization effects and memory properties in ionic-liquid gated InAs nanowire transistors

Demontis,

Prete,

Faella

et al. 2024

Nano Ex.

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“…In this context, TMDs provide an ideal material platform to be employed in integrated photonic devices, owing to their flexibility in terms of material properties [116] and access to reversible tuning of their electrical properties by exploiting ionic liquid gating-a non conventional gating technique which has been proven to outperform conventional gating techniques [117,118]. Figure 5 shows representative examples of the integration of TMDs on silicon photonic platforms.…”

Section: Two-dimensional Materials Integration In Integrated Photonic...mentioning

confidence: 99%

Hybrid Integrated Silicon Photonics Based on Nanomaterials

Prete,

Amanti,

Andrini

et al. 2024

Photonics

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Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating the development of novel devices, fostering fast and reliable communication protocols and the manipulation of quantum information, traditional integrated silicon photonics faces inherent physical limitations that necessitate a challenging trade-off between device efficiency and spatial footprint. To address this issue, researchers are focusing on the integration of nanoscale materials into photonic platforms, offering a novel approach to enhance device performance while reducing spatial requirements. These developments are of paramount importance in both classical and quantum information technologies, potentially revolutionizing the industry. In this review, we explore the latest endeavors in hybrid photonic platforms leveraging the combination of integrated silicon photonic platforms and nanoscale materials, allowing for the unlocking of increased device efficiency and compact form factors. Finally, we provide insights into future developments and the evolving landscape of hybrid integrated photonic nanomaterial platforms.

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“…In this frame, nanowires are given particular attention, due to their large aspect ratio allowing for reduced thermal conductivity with respect to the bulk counterpart, and thanks to the reliability of device fabrication protocols and control methods. Leveraging on unique combinations of newly engineered nanowire heterostructures, advanced nanofabrication techniques and innovative control strategies , such as electrolyte gating, seminal results were recently achieved including the giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires [8], and the demonstration of heat-driven transistors at the nanoscale [9].…”

mentioning

confidence: 99%