NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive Stress

Abstract

Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress (∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift (ΔV th ) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition V stress . Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at V G = −0.99 V using E ox power law lifetime extrapolation model or at V G = −0.76 V using the exponential V stress model.