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The structural, compositional, and electrical properties of epitaxial Ni4InGaAs2 (denoted as Ni-InGaAs) film formed by annealing sputtered Ni film on InGaAs were investigated. It was found that Ni-InGaAs adopts a NiAs (B8) structure with lattice parameters of a = 0.396 ± 0.002 nm and c = 0.516 ± 0.002 nm, and exhibits an epitaxial relationship with InGaAs, with orientations given by Ni-InGaAs[1¯10]//InGaAs[001] and Ni-InGaAs[110]//InGaAs[110]. The epitaxial Ni4InGaAs2 film has bulk electrical resistivity of ∼102 μΩ·cm, which increases as the film thickness scales below 10 nm. The results of this work would be useful for the development of contact metallization for high mobility InGaAs metal-oxide-semiconductor field-effect transistors.

We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (W NW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (I ON/I OFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μ eff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (V TH) shift and I OFF reduction with continuous scaling of W NW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm W NW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes.

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