Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-&amp;#x043A; gate dielectric

Liu, Bin; Lim, Poon Nian; Yeo, Yee-Chia

doi:10.1109/irps.2010.5488674

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…The degradation is compared under the same stress field. The result shows that strain enhances the device degradation, agreeing with the literature [24]. In order to find out where this enhancement comes from, the developed energy profiling technique is applied and the effective charge density, ΔNox and its corresponding energy density, ΔDox, against Ef-Ev is shown in Fig.…”

Section: Extraction Of Energy Distributionsupporting

confidence: 83%

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

Gao

Zhang

et al. 2015

IEEE Trans. Semicond. Manufact.

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Abstract-Characterizing positive charges and its energy distribution in gate dielectric is useful for process qualification. A discharge-based technique is introduced to extract their energy distribution both within and beyond substrate bandgap. This work investigates the difficulties in its implementation on typical industrial parameter analyzer and provides solutions. For the first time, we demonstrate the technique's applicability to the advanced 22 nm fabrication process and its capability in evaluating the impact of different strains on the energy distribution. The test time is within several hours. This, together with its implementation on industrial parameter analyzer, makes it a useful tool in the semiconductor manufacturing foundries for process monitoring and optimization.

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Section: Extraction Of Energy Distributionsupporting

confidence: 83%

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

Gao

Zhang

et al. 2015

IEEE Trans. Semicond. Manufact.

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“…VI characteristics of TiO2 based FinFET are being explored with simulation by varying the thickness of the oxide. A FinFET is a multigate device button on a substrate where the gate is placed on a channel with high mobility in channel and reliability (Liu, Lim, and Yeo 2010). VI characteristics of FinFET can be used to determine the current and voltage characteristics of the triple gate FinFET structure in the future and it can also be used for the fabrication of highly efficient FinFET which can be used as an amplifier as well as a switch (Masahara et al 2005).…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of TiO2 based OMEGA FinFET Compared with Conventional SiO2 Material

Swabhijit¹,

Mohana²

2021

alinteri

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Aim: The aim of the study is to perform the electrical characterization of Innovative TiO2 based Omega FinFET and compare it with SiO2 material by varying the oxide thickness ranging from 1nm to 20nm using nanotechnology. Materials and Methods: DFT tool is used to perform the above characterisation. The method was performed for 20 samples per group, TiO2(n=20) and SiO2(n=20). Same samples were used for both the control group and experimental group. Different values of drain current were obtained by varying the thickness for both TiO2 and SiO2. Result: Drain current was obtained for TiO2 (0.645μA) and found better compared with SiO2 (0.58μA). Conclusion: It is concluded that the TiO2 Omega FinFET appears to be better compared to SiO2 based omega FinFET.

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“…[2−4] Ge pMOSFETs with a Si cap have exhibited good performance and high resistance to negative bias temperature instability (NBTI) stress. [3,4] Normally, the epitaxial growth temperature is above 500 ∘ C, and Si/Ge interdiffusion occurs during the growth. To separate the high-𝜅 dielectric and Ge channel thoroughly, a Si cap with a thickness of several nanometers is required.…”

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confidence: 99%

Germanium PMOSFETs with Low-Temperature Si ₂ H ₆ Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Wang

Han

Liu

et al. 2014

Chinese Phys. Lett.

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We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxidesemiconductor field-effect transistors (pMOSFETs) with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm 2 /V•s at an inversion charge density of 2.5 × 10 12 cm −2 . NBTI characterization is performed to investigate the linear transconductance (𝐺 M,lin ) degradation and threshold voltage shift (Δ𝑉TH) under NBT stress. Ge pMOSFETs with a 10 yr lifetime at an operating voltage of −0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350 ∘ C to 550 ∘ C, the degradation of NBTI characteristics, e.g., 𝐺 M,lin loss, Δ𝑉TH and an operating voltage for a lifetime of 10 yr, is observed.

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Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-к gate dielectric

Cited by 3 publications

References 11 publications

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

Electrical Characterization of TiO2 based OMEGA FinFET Compared with Conventional SiO2 Material

Germanium PMOSFETs with Low-Temperature Si ₂ H ₆ Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

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Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-&#x043A; gate dielectric

Cited by 3 publications

References 11 publications

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric

Electrical Characterization of TiO2 based OMEGA FinFET Compared with Conventional SiO2 Material

Germanium PMOSFETs with Low-Temperature Si 2 H 6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

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Product

Resources

About

Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-к gate dielectric

Germanium PMOSFETs with Low-Temperature Si ₂ H ₆ Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability