Nature of the crystallographic defects on the (111) Te surface of CdTe delineated by preferential etching

Bagai, Rashmi; Seth, Gaurav; Borle, W.N.

doi:10.1016/0022-0248(88)90128-5

Cited by 11 publications

(6 citation statements)

References 19 publications

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“…Nakagawa’s solution was employed on face A (Cd), since it had been proved, comparing with X-rays results, that each corrosion figure corresponded to a dislocation [ 22 , 23 ]. On face B (Te), instead, the etching solution gave lower average values of the dislocation density [ 32 , 33 ]. This was observed in all our wafers and is coincident with reports in the literature, so the information from face B was discarded.…”

Section: Resultsmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques.

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Section: Resultsmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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“…In case of (1 1 1)B plane some pits were somewhat revealed but were not very clear, whereas at (1 1 0) plane we could not even find any etch pit. This is probably because of some imbalance of the oxidation and dissolution processes [16,17]. Therefore, we need certain modifications in its composition to maintain balance between the rates of the oxidation and dissolution, so that it may be used as a reliable etchant for (1 1 1)B and (1 1 0) HgCdTe LPE epilayers to reveal the etch pits clearly.…”

Section: Defect Etchantsmentioning

confidence: 98%

Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant

Nokhwal

Saxena

Sharma

et al. 2015

Infrared Physics & Technology

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“…Inclusion sizes may vary over a wide range from 3 to 50 μm. After structure-selective etching second phase inclusions may be observed as pits with a characteristic dislocation rosette around them [1]. The existence of similar inclusions and tellurium precipitates is confirmed by X-ray diffraction, Auger spectroscopy for CdTe [2], infrared spectroscopy for CdZnTe [3], and Raman spectroscopy for bulk Cd x Hg 1-x Te [4].…”

mentioning

confidence: 93%

“…Thus, we have obtained A 1 and two E-modes of tellurium located at 123, 90 and 142 cm -1 , correspondingly; the mode, activated by Hg vacancy (107 cm -1 ); optical phonon modes at 116.5, 139.5, 157.8 cm -1 . In all spectra we have not seen any additional features at 132-136 cm -1 that were tentatively assigned to a clustering mode [6].…”

mentioning

confidence: 97%

Raman scattering in CdHgTe epitaxial layers grown on CdZnTe substrates

Belogorokhov

Смирнова

Denisov

et al. 2010

Phys. Status Solidi (c)

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Raman scattering spectra of CdxHg1–xTe/Cd1‐yZnyTe epitaxial structures were studied. Experimental results have been obtained by micromode method over cleaved surface of the sample formed normally to the [111] direction immediately prior to measurement procedure. Raman spectra obtained were shown to be dominated by vibrational modes induced by crystal defects. Special attention was paid to the possibility of obtaining information on the presence of structural defects in cation sublattice and tellurium nanoprecipitates. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nature of the crystallographic defects on the (111) Te surface of CdTe delineated by preferential etching

Cited by 11 publications

References 19 publications

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant

Raman scattering in CdHgTe epitaxial layers grown on CdZnTe substrates

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