Bromine-and iodine-based solutions were compared for surface preparation of HgCdTe epilayers. The iodine (I)-potassium iodide (KI)-based non-aqueous solution for surface preparation of mercury cadmium telluride (HgCdTe) epilayers is less corrosive, less toxic and technologically more suitable compared to the widely used bromine-based etchants. It provides improved surface morphology and a lower amount of oxides. A comparative study of the oxide content and elemental tellurium residue on the polished surface was made by x-ray photoelectron spectrometry measurements. Least elemental Te content was observed on the HgCdTe surface polished with I-KI solution as compared to bromine-based etchants. It may result in reduced trap density at the surface of HgCdTe. The possibility of potassium diffusion due to I-KI polishing at the HgCdTe surface, as well as at the cadmium zinc telluride (CdZnTe)-HgCdTe interface, has been ruled out using secondary ion mass spectrometry. Performance of photodiodes fabricated on the polished epilayers (Hg 0.7 Cd 0.3 Te) was assessed and the zero bias dynamic resistance area product (R 0 A) was measured as >5 9 10 4 X cm 2 under stray illumination.
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