Observation of Over-Layer Deposition on HgCdTe Epilayers Grown by Vertical dipping Liquid Phase Epitaxy

Nokhwal, Radheshyam; Pandey, Akhilesh; Sharma, B. L.; Sharma, Puneet; Garg, Preeti; Hashmi, S.A.; Sharma, R. K.

doi:10.1007/978-3-319-03002-9_214

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(3 citation statements)

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“…We found that bromine and iodine have different approaches to oxide formation on the HgCdTe surface. Thermodynamically, it has been reported that the chemically etched surface mainly consists of TeO 2 with small amounts of CdTeO 3 and HgTeO 3 . CdTeO 3 is the most stable oxide according to Gibbs free energy calculations.…”

Section: Xps Analysismentioning

confidence: 99%

“…Hg can be oxidized in complex forms, the dominant being HgTeO 3 . 18,19 The asymmetric Hg 4f 7/2 peak was found at 100.9 eV.…”

Section: Hg Oxidesmentioning

confidence: 99%

“…Additionally, there is a thin defective, low composition (x) layer on the top surface that persists after annealing for reasons reported elsewhere. 2,3 It is essential to remove these defects prior to device fabrication, making surface preparation a key process in the fabrication of HgCdTe photovoltaic arrays. The common method is mechanical polishing using alumina powder followed by chemo-mechanical polishing and chemical-free etching, since the mechanical polishing procedure leaves the HgCdTe surface mechanically damaged to a depth of $1-2 lm.…”

Section: Introductionmentioning

confidence: 99%

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Surface Studies on HgCdTe Using Non-aqueous Iodine-Based Polishing Solution

Nokhwal

Srivastav

Goyal

et al. 2017

Journal of Elec Materi

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Bromine-and iodine-based solutions were compared for surface preparation of HgCdTe epilayers. The iodine (I)-potassium iodide (KI)-based non-aqueous solution for surface preparation of mercury cadmium telluride (HgCdTe) epilayers is less corrosive, less toxic and technologically more suitable compared to the widely used bromine-based etchants. It provides improved surface morphology and a lower amount of oxides. A comparative study of the oxide content and elemental tellurium residue on the polished surface was made by x-ray photoelectron spectrometry measurements. Least elemental Te content was observed on the HgCdTe surface polished with I-KI solution as compared to bromine-based etchants. It may result in reduced trap density at the surface of HgCdTe. The possibility of potassium diffusion due to I-KI polishing at the HgCdTe surface, as well as at the cadmium zinc telluride (CdZnTe)-HgCdTe interface, has been ruled out using secondary ion mass spectrometry. Performance of photodiodes fabricated on the polished epilayers (Hg 0.7 Cd 0.3 Te) was assessed and the zero bias dynamic resistance area product (R 0 A) was measured as >5 9 10 4 X cm 2 under stray illumination.

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Section: Xps Analysismentioning

confidence: 99%

“…Hg can be oxidized in complex forms, the dominant being HgTeO 3 . 18,19 The asymmetric Hg 4f 7/2 peak was found at 100.9 eV.…”

Section: Hg Oxidesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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