Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Abstract

The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs ( 1 ¯ 1 1 ¯ ) B by metal-organic vapor phase epitaxy

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

“…16 Among all kinds of metallic catalysts, Au has been commonly used to catalyze the growth of semiconductor nanowires 9,17 and nanowire heterostructures. [18][19][20] There are several approaches to prepare Au catalysts, such as aerosolgenerated Au particles, 21 colloidal Au particles, 22,23 electron beam lithography defined Au particles, 24 and Au particles generated by annealing of thin films. 25,26 Of these approaches, the thin film generated Au nanoparticles (TFA) is a simple and cost-effective approach, in which the Au nanoparticles are realized by decomposition of the Au thin films into nanoparticles during annealing process.…”

Bonding in intermetallics may be deceptive – The case of the new type structure Au2InGa2

“…Vapor-Liquid-Solid (VLS) growth [1] of mixed Ga, In containing III-V compound semiconductors [2] often involves gold as a solvent and hence the thermodynamics of the ternary system Au-In-Ga are interesting for the understanding of optimal growth conditions [3][4][5].…”

Faster radial strain relaxation in InAs–GaAs core–shell heterowires

“…14 Strain relaxation in the wurtzite (WZ) InAs-GaAs core-shell system has been reported by at least two other groups. 15,16 In a previous paper, we described the structure and defects from strain relaxation in the core-shell, InAs-GaAs nanowire system grown by molecular beam epitaxy (MBE). 17 Wurtzite phase heterowires with preferred growth directions (001) and hexagonal sidewall facets were investigated.…”

“…The bulk ZB lattice constants of GaAs and InAs (a GaAs ¼ 5.6533 Å ; a InAs ¼ 6.0583 Å ) 18 give a ZB mismatch with respect to the average lattice constant, f ZB ¼ Da/a average = 6.92%. The WZ phases of these semiconductors are commonly encountered in nanowires grown via vapor-liquid-solid processes, 15,16 but the equilibrium lattice constants are less well known than the thermodynamically more stable ZB phases. Bulk WZ InAs 19 and GaAs 20 crystals can only be formed at high pressures and temperatures, but are both stable when cooled to room temperature a)…”