Native point defects in CdTe and its stability region

Wienecke, M.; Berger, H.; Schenk, M.

doi:10.1016/0921-5107(93)90048-r

Cited by 46 publications

(20 citation statements)

References 12 publications

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“…The experimental results of electrical measurements in Te-rich CdTe are not consistent at all [8,17,19]. Thus, there is still controversy concerning formation and ionization energies of the defects in different references [6,17,18]. In our model, we used the formation and ionization energies of the defects obtained from ab initio calculation [18], which fit our experimental result well.…”

Section: Theorymentioning

confidence: 50%

“…The different models of defect structure on Te-rich side were proposed assuming Cd vacancy (V Cd ), Te anticite (Te Cd ) or Te interstitial (Te I ) [7]. The experimental results of electrical measurements in Te-rich CdTe are not consistent at all [8,17,19]. Thus, there is still controversy concerning formation and ionization energies of the defects in different references [6,17,18].…”

Section: Theorymentioning

confidence: 98%

“…There was a wide discussion whether Te vacancies (V Te ) or Cd interstitials (Cd I ) dominate as donor defects near Cd saturation conditions [17,18]. This question cannot be resolved by electrical measurements because both temperature and pressure dependencies of the concentration of the defects are formally identical.…”

Section: Theorymentioning

confidence: 99%

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Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Turkevych¹,

Grill

Franc

et al. 2003

Cryst. Res. Technol.

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Thermodynamic conditions for post-growth annealing to prepare near stoichiometric semi-insulating CdTe are studied for undoped, and Sn and Ge-doped single crystals. The main aim of the annealing procedure was to obtain high resistive material with the minimal concentration of native and foreign defects. The high temperature (200 -1000 °C) in-situ conductivity σ and Hall effect measurements were used to control the native defect density and to determine the Cd pressure p Cd at which shallow defects are compensated. It is shown that contrary to the undoped samples in which the change of the type of conductivity by variations of p Cd is easy, the Sn-and Ge-doped samples exhibit a much more stable behavior due to the Sn (Ge) selfcompensation. It was found that: the temperatures near 500 °C is optimum for the real-time annealing of bulk samples, the chemical diffusion is sufficiently fast at these temperatures while the uncontrolled change of defect density distribution during the subsequent cooling process is minimized. The time-dependent charge measurement technique was used to characterize the room-temperature specific resistivity distribution in the as-grown crystals, which indirectly controls the dynamic of solidification process. This allows us to consider the specific resistivity distribution along the growth direction of each crystal in terms of superposition of segregation and self-compensation phenomena.

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Section: Theorymentioning

confidence: 50%

Section: Theorymentioning

confidence: 98%

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Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Turkevych¹,

Grill

Franc

et al. 2003

Cryst. Res. Technol.

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“…Te [7][8][9][10][11], Cd + i [12] and even Cd Te [5], but usually the double charged native donors are considered to be the main ones. According to Chern [7] V + 2…”

Section: Introductionmentioning

confidence: 99%

CdTe native point defects under Cd saturation

Fochuk

Panchuk

2006

Phys. Status Solidi (c)

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“…Previous calculations and experiments indicate that vacancies have lower formation energy than interstitials or antisites, and they can remain after samples are cooled, so vacancies are more likely to influence hole density. 19,20 After the Te anneal, a 1.54-1.55-eV peak emerges in the low-temperature PL data that have been identified as a donor-acceptor pair (DAP) transition involving an acceptor Cd-vacancy complex. [21][22][23][24] 116102 When samples are annealed in Te with Cu present, Cu can occupy Cd sites to form Cu Cd acceptors.…”

Section: 15mentioning

confidence: 99%

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

et al. 2016

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CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm−3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

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Native point defects in CdTe and its stability region

Cited by 46 publications

References 12 publications

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

CdTe native point defects under Cd saturation

Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

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