CdTe native point defects under Cd saturation

Abstract

The high temperature point defect (PD) structure of undoped CdTe under well-defined Cd vapour pressure was studied. The single crystals were grown by different techniques (vapor phase, THM, classical and high pressure Bridgman methods). By using in situ Hall effect measurements it was established that the native double charged PDs Cd

Dopant content and thermal treatment of CdZnTe≪In≫: Effects on point-defect structures

“…The concentration of the electrically active residual impurities did not exceed 10 16 at/cm 3 • Atomic absorption spectroscopy was used for all chemical analyses. The procedure for measuring the high-temperature Hall effect is described in [17]; for these investigations at 80-420 K, we employed Cu contacts and the compensation method. The Hall factor was taken as equal to I.…”

The diffusivity of the Cd interstitial in CdTe

“…Arrhenius expressions for n/P 1/3 Cd as a function of temperature, based on direct experimental (in situ) measurements, are shown in table 3: in the case of [4] n is given by equation (16). These data suggest that [11] were able to separate K 2 and K 3 because they carried out measurements down to 500 • C. Also shown in table 3 are the expressions for [Cd •• i ] at Cd saturation which are associated with the corresponding n/P 1/3 Cd equations.…”

“…The results from more recent in situ measurements by Fochuk and Panchuk [11] in undoped CdTe introduce the doubly ionized Te vacancy, V…”

“…Despite these variations it is possible that some parameter values may be quite similar over a limited temperature range. A query arises over the origin of the parameters in the K 2 expression in table 2 given by [4], for the [19] reference, as the authors in [19] measured the electrical conductivity rather than n. Using the n data from figure 1 by the same authors [11] gives…”

“…and Fochuk and Panchuk [11], from measurements of the temperature variation of n/P 1/3 Cd , obtained the expressions for K 2 and K 3 cited by [4] in table 2. Arrhenius expressions for n/P 1/3 Cd as a function of temperature, based on direct experimental (in situ) measurements, are shown in table 3: in the case of [4] n is given by equation (16).…”