Narrow-linewidth surface-emitting distributed feedback semiconductor lasers with low threshold current

Broad-band self-injection organic laser amplifier based on a DBR microcavity

“…Microcavity lasers based on organic semiconductors have been extensively reported. [1][2][3][4][5][6][7] The laser designs using distributed feedback (DFB) schemes and distributed Bragg reflectors (DBR) have been employed in the microcavity design for organic lasers. [8][9][10] These designs are particularly suitable for the thin-film lasers using polymeric semiconductors, where the Bragg gratings are essential for achieving the optical feedback in both schemes.…”

Sensing strategy based on random slot semiconductor laser

“…Semiconductor lasers are used in a wide range of applications, such as sensors [1], space laser communications [2], precision measurements [3], pumped solid-state lasers [4], and fiber lasers [5]. There are many types of grating semiconductor lasers, including first-order distributed feedback (DFB) lasers [6,7], first-order distributed Bragg reflector (DBR) lasers [8,9], surface-emitting DFB semiconductor lasers [10,11], surface high-order grating lasers [12,13], and so on. DFB lasers, * Author to whom any correspondence should be addressed.…”

A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

“…In recent years, the schemes commonly used to achieve 1-μm band lasers mainly include solid-state lasers [ 7 , 8 ], fiber lasers [ 9 , 10 ], and semiconductor lasers [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. Although solid-state lasers and fiber lasers can achieve linewidth on the order of kHz, solid-state lasers are large, are sensitive to shock and vibration, have relatively low stability and require additional laser diode (LD) pumping.…”

“…Through a reasonable laser structure design, the lasers possess unique advantages, such as a compact structure, reliability, and photoelectric efficiency; additionally, these lasers perform comparably to fiber lasers, especially concerning their linewidth and noise behaviors [ 11 ]. Semiconductor lasers with distributed feedback (DFB) and distributed Bragg reflection (DBR) structures [ 12 , 13 , 14 , 15 ], through the optimization of their waveguides, grating structures, optical field limiting factors, linewidth broadening factors and transmission control losses, can exhibit linewidth output levels on the order of MHz or less; however, they need complex extension and device structures, which increases the technology complexity and results in high costs. Common external cavity laser (ECL) structures, such as etalons, volume gratings and diffraction gratings [ 16 , 17 , 18 ], can significantly narrow linewidth, but the low integration levels of lasers and their sensitivities to environmental vibrations affect their reliability and stability characteristics.…”