Transition metal carbides (TMCs) are a large family of materials with many intriguing properties and applications, and high-quality 2D TMCs are essential for investigating new physics and properties in the 2D limit. However, the 2D TMCs obtained so far are chemically functionalized, defective nanosheets having maximum lateral dimensions of ∼10 μm. Here we report the fabrication of large-area high-quality 2D ultrathin α-Mo2C crystals by chemical vapour deposition (CVD). The crystals are a few nanometres thick, over 100 μm in size, and very stable under ambient conditions. They show 2D characteristics of superconducting transitions that are consistent with Berezinskii-Kosterlitz-Thouless behaviour and show strong anisotropy with magnetic field orientation; moreover, the superconductivity is also strongly dependent on the crystal thickness. Our versatile CVD process allows the fabrication of other high-quality 2D TMC crystals, such as ultrathin WC and TaC crystals, which further expand the large family of 2D materials.

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Nanoscale ferroelectrics are expected to exhibit various exotic domain configurations, such as the full flux-closure pattern that is well known in ferromagnetic materials. Here we observe not only the atomic morphology of the flux-closure quadrant but also a periodic array of flux closures in ferroelectric PbTiO3 films, mediated by tensile strain on a GdScO3 substrate. Using aberration-corrected scanning transmission electron microscopy, we directly visualize an alternating array of clockwise and counterclockwise flux closures, whose periodicity depends on the PbTiO3 film thickness. In the vicinity of the core, the strain is sufficient to rupture the lattice, with strain gradients up to 10(9) per meter. Engineering strain at the nanoscale may facilitate the development of nanoscale ferroelectric devices.

Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays.

Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications.However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and integration of novel electronics.