Nanowire dopant measurement using secondary ion mass spectrometry

Chia, A. C. E.; Dhindsa, Navneet; Boulanger, Jonathan; Wood, B.; Saini, Simarjeet S.; LaPierre, Ray

doi:10.1063/1.4931148

Cited by 14 publications

(11 citation statements)

References 32 publications

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“…We start with Be, which is a commonly used p-type dopant for GaAs and other III−V materials 33 and III−V NWs. 14,34,35 Be-doped GaAs NWs analyzed in this work were grown by Ga-catalyzed MBE as reported in ref 14 and summarized in Table 1. For the purposes of this study, additional NW samples were grown in a manner identical to that described in ref 14.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

et al. 2020

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Controllable doping of III–V nanowires grown by the vapor–liquid–solid method remains a challenging task. In sharp contrast to planar layers of the same materials, dopants mainly incorporate into nanowires through a catalyst droplet. We present a thermodynamic theory of the doping process in vapor–liquid–solid III–V nanowires, which provides explicitly the doping level in nanowires versus the nominal doping, material fluxes, and temperature. It is shown that the doping level is directly related to the growth conditions and strongly depends on the epitaxy technique used to grow nanowires. We present and analyze experimental data on p-type Be doping, n-type Te doping, and Si doping of GaAs nanowires that can be either p-type or n-type depending on the growth environment. A good correlation of the model with the data is obtained. We explain why Be and Te doping leads to lower doping levels in GaAs nanowires compared to the nominal ones and how Si doping changes from p-type in molecular beam epitaxy to n-type in hydride vapor-phase epitaxy. These results should be useful for fundamental understanding and developing practical tools for the controllable p-type and n-type doping of GaAs and other III–V nanowires.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

et al. 2020

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“…The doping in semiconductor NWs has been assessed by a variety of techniques, including photoluminescence, Hall effect, − terahertz photoconductivity, four-point probe resistivity, field effect transistors, off-axis electron holography, − Raman spectroscopy, − X-ray photoemission spectroscopy, secondary ion mass spectrometry, Kelvin probe force microscopy (KPFM), , capacitance–voltage measurements, and atom probe tomography (APT). − A review on the doping of semiconductor NWs is available in ref .…”

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confidence: 99%

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

et al. 2017

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A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.

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“…While it has been established that heterostructures in NWs have a range of potentially useful features/applications, in order to test any samples grown a method is required to identify heterostructure features and check the quality of samples grown. There are a few options available, such as secondary ion mass spectrometry (SIMS) [198,199], however this section will focus on scanning transmission electron microscope (STEM), and looks at its use in obtaining composition profiles of heterostructures.…”

Section: Measuring Heterostructure Features Using Stemmentioning

confidence: 99%

Defects in Self-Catalysed III-V Nanowires

Gott¹

2022

Springer Theses

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Semiconductor nanowires are poised to be a candidate for next-generation technology with superior performance and a high integration ability. They have unique physical properties that are enabled by their nano-scale form-factor. Nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. The droplet consumption step in self-catalysed III-V nanowires can produce material with a high density of line defects, often with null Burgers vector, i.e., no long-range strain field. The presence of such defects can diminish device performance and make them unreliable.This thesis presents an extensive study made into defects present in semiconductor nanowires. Defect structures are analysed from atomic resolution electron microscope images, and observations show that the nanowire microstructure is very different from bulk material. Nanowires can contain line defects that (a) are trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Cathodoluminescence experiments reveal optical emission is quenched in defective regions, showing that they act as strong non-radiative recombination centers.Stability of defects is tested by in-situ electron microscopy to analyse defect behaviour in GaAsP nanowires using short annealing cycles. Movement of null Burgers vector defects appears to be consistent with the thermally activated singleor double-kink mechanisms of dislocation glide, with velocities that do not exceed 1 nm s −1 . Motion of null Burgers vector defects is found to depend on their size, position, and surrounding environment and sets an upper limit to activation energy around 2 eV. The majority of defects (>70%) are removed by post-growth annealing for several seconds at temperatures in excess of 640 °C, while the remaining defects do not move and are thermodynamically stable in the nanowire.Finally, axial heterostructures in GaAsP nanowires with GaAs quantum dots are examined and a selection of theoretical models are tested to see how well they fit experimental interfaces. Of the physical models tested, a model recently developed by Dubrovskii was found to best fit experimental data. Interface sharpness and size of quantum dots were measured for different nanowire radii and both showed no obvious trend. These results are explained by the low group V concentration and solubility in the catalyst, and length distribution of the nanowires respectively. xv

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Nanowire dopant measurement using secondary ion mass spectrometry

Cited by 14 publications

References 32 publications

Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

Be, Te, and Si Doping of GaAs Nanowires: Theory and Experiment

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

Defects in Self-Catalysed III-V Nanowires

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