Nanotaper for compact mode conversion

Almeida, Vilson R.; Panepucci, Roberto R.; Lipson, Michal

doi:10.1364/ol.28.001302

Cited by 795 publications

(377 citation statements)

References 13 publications

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“…That is, the introduction of the thin slab does not affect significantly the mode distribution in the rib waveguide as compared to the strip waveguide. This is important in order to obtain a good coupling efficiency from (to) the high-index-contrast rib waveguide into (from) a fiber-to-waveguide coupler implemented in a strip waveguide [4].…”

Section: Resultsmentioning

confidence: 99%

“…Passive submicrometer-size structures such as ultra-low-loss strip waveguides [3], efficient couplers [4], microring resonators [5], and nanocavities [6] on SOI have been demonstrated. Active waveguide devices (modulators and switches), however, have been proposed only on large micrometer-size SOI waveguides [7], [8].…”

mentioning

confidence: 99%

“…The silicon layer (device layer) has an n-type background doping concentration of 10 cm , whereas a uniform doping concentration of 10 cm for both p and n regions is considered. We have assumed typical values for the height and width of a 1.55-m-wavelength high-index-contrast strip SOI waveguide, 250 and 450 nm, respectively [4]. The width of the doped regions and their distance to the rib sidewalls are referred to as and , respectively.…”

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confidence: 99%

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Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

Barrios

Almeida

Panepucci

et al. 2003

J. Lightwave Technol.

135

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Abstract-In this paper, we propose and analyze an electrically modulated silicon-on-insulator (SOI) submicrometer-size high-index-contrast waveguide. The geometry of the waveguide provides high lateral optical confinement and defines a lateral p-i-n diode. The electrooptic structure is electrically and optically modeled. The effect of the waveguide geometry on the device performance is studied. Our calculations indicate that this scheme can be used to implement submicrometer high-index-contrast waveguide active devices on SOI. As an example of application, a one-dimensional microcavity intensity modulator is predicted to exhibit a modulation depth as high as 80% by employing a dc power consumption as low as 14 W.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

Barrios

Almeida

Panepucci

et al. 2003

J. Lightwave Technol.

135

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“…Improving the coupling effi ciency is therefore a major task in device engineering to facilitate the further commercialization of OEICs. End-fi re coupling techniques using inverse tapers [52,53], grating directional couplers [54] and 3D tapers [55] as mode converter have been studied. Coupling effi ciency of better than -1 dB can normally be achieved using the inverse taper approach, the best results for which, 0.25 dB polarization-insensitive coupling loss and a 1 dB bandwidth of 150 nm, were obtained recently by Bakir et al [56].…”

Section: Fiber-chip Couplingmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…When the cross-sectional dimension of the waveguide is large, the intensity is low because of the large mode size. When the dimension of the waveguide is too small, the intensity is also low because the mode becomes delocalized [10]. Therefore, there is an optimal waveguide dimension for achieving the highest intensity.…”

Section: Theorymentioning

confidence: 99%

Light Guiding in Low Index Materials using High-Index-Contrast Waveguides

Almeida

Panepucci

et al. 2003

MRS Proc.

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We propose a novel high-index-contrast waveguide structure capable of light strong confinement and guiding in low-refractive-index materials. The principle of operation of this structure relies on the electric field (E-field) discontinuity at the interface between high-indexcontrast materials. We show that by using such a structure the E-field can be strongly confined in a 50-nm-wide low-index region with normalized average intensity of 20 µm -2 . This intensity is approximately 20 times higher than that can be achieved in SiO 2 with conventional rectangular or photonic crystal waveguides.

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Nanotaper for compact mode conversion

Cited by 795 publications

References 13 publications

Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

Device engineering for silicon photonics

Light Guiding in Low Index Materials using High-Index-Contrast Waveguides

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