Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

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We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.

Photonic circuits, in which beams of light redirect the flow of other beams of light, are a long-standing goal for developing highly integrated optical communication components. Furthermore, it is highly desirable to use silicon--the dominant material in the microelectronic industry--as the platform for such circuits. Photonic structures that bend, split, couple and filter light have recently been demonstrated in silicon, but the flow of light in these structures is predetermined and cannot be readily modulated during operation. All-optical switches and modulators have been demonstrated with III-V compound semiconductors, but achieving the same in silicon is challenging owing to its relatively weak nonlinear optical properties. Indeed, all-optical switching in silicon has only been achieved by using extremely high powers in large or non-planar structures, where the modulated light is propagating out-of-plane. Such high powers, large dimensions and non-planar geometries are inappropriate for effective on-chip integration. Here we present the experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index. The transmission of the structure can be modulated by up to 94% in less than 500 ps using light pulses with energies as low as 25 pJ. These results confirm the recent theoretical prediction of efficient optical switching in silicon using resonant structures.

The development of compact, chip-scale optical frequency comb sources (microcombs) based on parametric frequency conversion in microresonators has seen applications in terabit optical coherent communications, atomic clocks, ultrafast distance measurements, dual-comb spectroscopy, and the calibration of astophysical spectrometers and have enabled the creation of photonic-chip integrated frequency synthesizers. Underlying these recent advances has been the observation of temporal dissipative Kerr solitons in microresonators, which represent self-enforcing, stationary, and localized solutions of a damped, driven, and detuned nonlinear Schrödinger equation, which was first introduced to describe spatial self-organization phenomena. The generation of dissipative Kerr solitons provide a mechanism by which coherent optical combs with bandwidth exceeding one octave can be synthesized and have given rise to a host of phenomena, such as the Stokes soliton, soliton crystals, soliton switching, or dispersive waves. Soliton microcombs are compact, are compatible with wafer-scale processing, operate at low power, can operate with gigahertz to terahertz line spacing, and can enable the implementation of frequency combs in remote and mobile environments outside the laboratory environment, on Earth, airborne, or in outer space.