2017
DOI: 10.1109/tmag.2017.2708980
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Nanostructured La–Sr–Mn–Co–O Films for Room-Temperature Pulsed Magnetic Field Sensors

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Cited by 13 publications
(7 citation statements)
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“…Such nanostructured films have an advantage in comparison with the epitaxial ones, since the magnetic sensors produced using these films operate in a broader temperature and magnetic field range 41 . It was demonstrated that La 1−x Sr x MnO 3 films doped with a certain amount of Co (y = 0.06–0.08) exhibit higher resistivity and magnetoresistance values at room temperature 42,43 thus, the substitution of Co for Mn in manganite films could increase the sensitivity of the sensors to magnetic field. Figure 5 presents the magnetoresistance dependences on magnetic flux density for two films: LSMO and LSMCO doped with Co (y = 0.14), exhibiting negative colossal magnetoresistance phenomenon.…”
Section: Resultsmentioning
confidence: 99%
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“…Such nanostructured films have an advantage in comparison with the epitaxial ones, since the magnetic sensors produced using these films operate in a broader temperature and magnetic field range 41 . It was demonstrated that La 1−x Sr x MnO 3 films doped with a certain amount of Co (y = 0.06–0.08) exhibit higher resistivity and magnetoresistance values at room temperature 42,43 thus, the substitution of Co for Mn in manganite films could increase the sensitivity of the sensors to magnetic field. Figure 5 presents the magnetoresistance dependences on magnetic flux density for two films: LSMO and LSMCO doped with Co (y = 0.14), exhibiting negative colossal magnetoresistance phenomenon.…”
Section: Resultsmentioning
confidence: 99%
“…The dopping at so-called B-site (Co substitution for Mn), destroys the long range ferromagnetic ordering and Mn 3+ -O-Mn 4+ network, resulting in the change of electric and magnetic properties. Thus, the Co substitution for Mn results in the decrease of the transition temperature from the paramagnetic to ferromagnetic phase and increase of the resistivity, resulting in the increase of room temperature magnetoresistance 42,43 . However, to compare MR values of manganite-cobaltite films and MR of graphene layers is complicated and not straightforward.…”
Section: Resultsmentioning
confidence: 99%
“…The possibility to construct CMRs LSMO films with B-site doping was also studied. Žurauskienė et al in 2017 [161] reported the results of a room temperature MR analysis of nanostructured La (1-x) Sr x Mn (1-y) Co y O 3 (LSMCO) films with varied cobalt content, comparing them to the LMSO films. The presence of Co as a B-site dopant ion causes the ferromagnetic order of Mn to be destroyed, resulting in changes in the magnetic and electrical properties of the manganite.…”
Section: Lsmomentioning
confidence: 99%
“…The T m lowered as the Co substitution for Mn increased, whereas the resistivity maximum tends to increase. [161] Another intriguing manganite is the Pr (1-x) Ca x MnO 3 (PCMO) phase, which has the property of having a significant resistance shift when an electric pulse is applied and might be utilized for the next-generation resistive non-volatile memory (ReRAM). The MOCVD fabrication of PCMO films with the desired atomic composition was reported by Nakamura et al [162] The feasibility of developing PCMO films at low temperatures was examined since hybrid integration of such perovskite material on silicon demands low deposition temperatures.…”
Section: Lsmomentioning
confidence: 99%
“…All these phenomena have been the subject of a great deal of research, in view of possible applications in spin electronics and magnetism. In this respect, magnetoresistive materials are already used today in a number of commercially available devices, such as magnetic sensors [8,9], magnetic recording heads [10], and magnetic memories [11,12]. The magnetoresistance effect, when observed in metals, is normally very small and offers scarce possibilities for technological applications.…”
Section: Introductionmentioning
confidence: 99%