One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.
The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.
The total internal refection ellipsometry (TIRE) method was used for the generation and study of the hybrid TPP-SPP mode on a photonic crystal structure with a thin layer of silver and graphene/PMMA. Raman spectroscopy showed a consistent monolayer graphene present on the Ag layer. Recent studies have also shown that TPP and SPP components in the hybrid plasmonic mode is sensitive to the variation of coupling strength due to presence of the graphene monolayer. The decrease of the TPP and SPP dip components in the TPP-SPP hybrid mode can be explained by the changes of the conductivity of the silver layer due to the presence of this additional graphene/PMMA structure, which results in the non-optimal resonance conditions for the hybrid plasmonic mode. The modified positions of the TPP and SPP components in the wavelength spectra when compared to their original, separate excitations, indicates a strong coupling regime. The design of these hybrid plasmonic/graphene-based nanostructures has attractive capabilities for the development of advanced optical sensors and integrated optical circuit technologies.
In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1− xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.
The demand to increase the sensitivity to magnetic field in a broad magnetic field ranges has led to the research of novel materials for sensor applications. Therefore, the hybrid system consisting of two different magnetoresistive materials – nanostructured Co-doped manganite La 1−x Sr x (Mn 1−y Co y ) z O 3 and single- and few-layer graphene – were combined and investigated as potential system for magnetic field sensing. The negative colossal magnetoresistance ( CMR ) of manganite-cobaltite and positive one of graphene gives the possibility to increase the sensitivity to magnetic field of the hybrid sensor. The performed magnetoresistance ( MR ) measurements of individual few layer (n = 1–5) graphene structures revealed the highest MR values for three-layer graphene (3LG), whereas additional Co-doping increased the MR values of nanostructured manganite films. The connection of 3LG graphene and Co-doped magnanite film in a voltage divider configuration significantly increased the sensitivity of the hybrid sensor at low and intermediate magnetic fields (1–2 T): 70 mV/VT of hybrid sensor in comparison with 56 mV/VT for 3LG and 12 mV/VT for Co-doped magnanite film, respectively, and broadened the magnetic field operation range (0.1–20) T of the produced sensor prototype.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.