Nanostructure investigations of nonlinear differential conductance inNdNiO3thin films

Abstract

Transport measurements on thin films of NdNiO 3 reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well below this transition appears consistent with a gradual formation of a gap in the holelike Fermi surface of this strongly correlated system. As T is decreased below the nominal transition temperature, transport becomes increasingly non-Ohmic, with a model of Landau-Zener breakdown becoming most suited for describing I (V ) characteristics as the temperature approaches 2 K.

Striped nanoscale phase separation at the metal–insulator transition of heteroepitaxial nickelates

“…A well-studied member of this family is NdNiO 3 , which shows a first-order temperaturedriven metal-insulator transition (MIT) accompanied by a structural phase change and the appearance of unconventional magnetic order [3][4][5][6]. Several models have been proposed to describe its electronic structure, however the microscopic mechanism of the phase transition is still debated [7][8][9][10][11][12][13]. A number of experiments underscores the key role of the lattice, as demonstrated by the influence of hydrostatic pressure, epitaxial strain and resonant phonon excitation on the MIT [14][15][16][17][18][19][20][21][22][23].…”

Suppression of long range magnetic ordering and electrical conduction in Y1.7Bi0.3Ir2<

“…6a. Since the valence band spectra of the thin film S1 clearly shows opening of a gap at the fermi level, the observed non-linear I-V curves can be analyzed within the Landau-Zener breakdown (LZB) model [47] related to electric field induced mobile excitation of the charge carrier overcoming the correlation gap. The current is given by,…”

A Material Framework for Beyond-CMOS Devices

“…demonstrated substantial modulation of the carrier concentration in NdNiO 3 , using charge transfer from a SrTiO 3 film and studied its influence on the metal-insulator transition [18] that occurs near 100 K [19]. In addition, exploration of Mott FET device concepts show coupling parameters such as g m >3000mS, [9] which could indeed be much larger than Si CMOS.…”