Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0⩽x ⩽0.05) thin films prepared by RF-magnetron sputter techniques

Shim, Joon Ho; Cho, N.-H.; Lee, E.H.

doi:10.1016/j.jnoncrysol.2007.06.012

Cited by 3 publications

(3 citation statements)

References 12 publications

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“…8,12,13) It was previously reported that aluminum-induced crystallization techniques can be used to produce Si crystallites at lower temperatures compared to purely amorphous Si (a-Si). 14) The overall layer exchange of Si with Al films or vice versa occurs during the transformation from amorphous to crystalline Si (c-Si). Crystallization occurs at 400 C, which suggests that the addition of Al significantly lowers the activation energy for crystallization.…”

Section: Introductionmentioning

confidence: 99%

Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation

Shim

Cho

Kim

et al. 2010

Jpn. J. Appl. Phys.

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D b r i e m e n t d'ktrophysique Relativiste et d e Cosmologie O b m t o i r e , 92190 Meudon, France AbsImacL Slatting from the equations of motion obeyed by fields, as they result from general approximations [they are m!ia to be of the following form [k2n(k)]+ = 0, for quasi bosons, and a similar equation for quasifermions] a lagmgian formalism is derived and, accordingly, consewed quantities are obtained. Next these fields are quantized and general expressions for the main observables are derived. Statistical mechanics of quasiparlicles then follow via the use of covariant Wigner functions.

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Section: Introductionmentioning

confidence: 99%

Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation

Shim

Cho

Kim

et al. 2010

Jpn. J. Appl. Phys.

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“…On the basis of the wavelength of the emitted light, the band gap of the nanocrystals was estimated to be 2.29, 2.08, 1.97, 1.96, 1.95, 1.82, and 1.70 eV for the films prepared at hydrogen dilution ratios of 0.33, 0.11, 0.05, 0.04, 0.03, 0.02, and 0.01, respectively. The band gap can be related to the mean nanocrystallite size using the following formula: [20][21][22] E ðeVÞ ¼ 1:56 þ 2:40…”

Section: Effect Of Hydrogen Dilution On Formation Of Si Nanocrystalsmentioning

confidence: 99%

Effect of Hydrogen Dilution on the Nanostructural and Electrooptical Characteristics of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Nam¹,

Son²,

Cho³

2013

Jpn. J. Appl. Phys.

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Nanocrystalline hydrogenated amorphous silicon (nc-Si:H) thin films were deposited on silicon wafers and glass by plasma-enhanced chemical vapor deposition. The hydrogen dilution in the precursor gases, [SiH 4 /H 2 ], were varied from 1 to 0.01 with the other deposition factors kept constant. The nanocrystallite size and volume fraction increased steadily with increasing hydrogen dilution ratio in the gas from 1 to 0.01. The mean size of the nanocrystallites ranged from 1 to 7 nm. The band gap of the films varied according to the hydrogen dilution, indicating the nanostructural features of the films. Film resistivity was dependent on the crystallite size and volume fraction in the films. In particular, the resistivity of a simple P-I-N type device decreased with increasing nanocrystallite size. The increased crystallinity can be explained by the predominance of Si-H bonds in the films. #

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“…In our previous reports, we have illustrated that aluminum-induced crystallization techniques can be utilized to produce Si crystallites at lower temperatures than in a-Si [9]. The overall layer exchange of Si with Al films or vice versa occurs during the transformation from amorphous to crystalline Si; the crystallization occurs at 400°C, and this implies that the addition of Al significantly lowers the activation energy for the crystallization.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al addition on the crystallization of a-AlxSi1−x (0.025⩽x⩽0.100) by electron-beam irradiation

Shim

Cho

Kim

et al. 2009

Journal of Non-Crystalline Solids

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Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0⩽x ⩽0.05) thin films prepared by RF-magnetron sputter techniques

Cited by 3 publications

References 12 publications

Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation

Formation of Si Nanocrystallites in Al-Added Amorphous Si Films by Electron Beam Irradiation

Effect of Hydrogen Dilution on the Nanostructural and Electrooptical Characteristics of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Effect of Al addition on the crystallization of a-AlxSi1−x (0.025⩽x⩽0.100) by electron-beam irradiation

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