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This study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition. SiH4and H2were used as the source gases, and the deposition time was varied from 10 to 360 min. The mean nanocrystallites size in the Si films increased from~6 to~8 nm with increasing film thickness from 85 to 4150 nm. Moreover, the nanocrystallite concentration and elastic modulus increased from~7.5 to~45% and from 135 to 147 Gpa, respectively. In the 4150 nm thick film, the relative volume fraction of Si nanocrystallites and relative fraction of Si–H bonds in the films were approximately~45% and~74.5%, respectively.

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This study examined the effects of the RF magnetron sputtering power and substrate temperature on the electrical and physical properties of Al:ZnO (AZO) thin films deposited on GaAs(011) and Si(001) substrates. The stress on the films, which was estimated by determining the position of the (002) XRD diffraction peaks, varied from 5.28 GPa to 2.29 GPa for the films deposited between 100 and 250 W RF power. A similar trend was observed for the films prepared at substrate temperatures ranging from R.T. to 300°C. The films prepared at 100°C showed the least amount of stress and the largest concentration of charge carriers. The concentration of charge carriers produced from the presence of [AlZn] is closely related to the stress on the films. Post-deposition annealing in a reducing atmosphere had not only decreased the compressive stress, but had also formed oxygen vacancies. The increased concentration of charge carriers after annealing was attributed to the ionization of oxygen vacancies with a probability of 0.1±0.03.