2007
DOI: 10.1002/ppap.200730716
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Nanosized Diamond Deposition via Plasma Medium

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Cited by 2 publications
(8 citation statements)
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“…However, etching phenomenon describes the detachment of atoms, molecules or radicals from surface by means of H or H + . Etching phenomenon removes the undesired species or detaches the molecules that are not grown in the favorable direction during the deposition stage 11, 23. Therefore, in order to study the growth process, we need to emphasize on the physics behind the different deposition and etching phenomena.…”
Section: Classification Of Main Plasma Gas–surface Reactions and Theimentioning
confidence: 99%
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“…However, etching phenomenon describes the detachment of atoms, molecules or radicals from surface by means of H or H + . Etching phenomenon removes the undesired species or detaches the molecules that are not grown in the favorable direction during the deposition stage 11, 23. Therefore, in order to study the growth process, we need to emphasize on the physics behind the different deposition and etching phenomena.…”
Section: Classification Of Main Plasma Gas–surface Reactions and Theimentioning
confidence: 99%
“…Neutrals surface reaction processes attribute to activation/deactivation, growth and gasification of surface sites, and inter‐conversion of surface morphology. The growth of diamond film is mainly interrelated to collisions of methyl radicals (CH 3 ) and acetylene (C 2 H 2 ) with surface 11. Elsewhere, the activation, deactivation, growth, and gasification of SP 2 sites, and the inter‐conversion between SP 2 and SP 3 phases determine the final crystallography and orientation of deposited diamond 2.…”
Section: Classification Of Main Plasma Gas–surface Reactions and Theimentioning
confidence: 99%
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