Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors

Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters

“…For the RTD resonator we later describe a figure of merit we refer to as the intrinsic resonator efficiency (IRE). The label intrinsic is carefully chosen to illustrate that device fabrication (with arising issues such as minimizing contact resistance, preventing sidewall leakage) benefit from the extensive canon [12]- [14] that exists from manufacturing devices with similar requirements. Whilst the resonant tunneling process is generally acknowledged as a femtosecond-scale event, the RTD device behaves as a high frequency electrical resonator, analogous to a Fabry-Pérot cavity.…”