Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

Chui, Chi On; Ito, Fuminori; Saraswat, Krishna C.

doi:10.1109/ted.2006.875808

Cited by 133 publications

(59 citation statements)

References 29 publications

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“…1,2 In particular, Ge has attracted considerable interest because it has a significantly higher intrinsic carrier mobility and a smaller band gap than Si does. 1,2 One possible modification of the channel region being considered at present involves replacing Si by alternative semiconductor substrate or channel materials, such as Ge, SiGe, or GaAs.…”

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confidence: 99%

“…1,2,4 They concluded that Ge substrates could be implemented in CMOS circuits for p-MOSFETs by introducing various interfacial layers, such as SiO 2 , GeO 2 , and Ge nitride, to prevent reactions between the high-gate oxide and the Ge substrate. 1,2,4 They concluded that Ge substrates could be implemented in CMOS circuits for p-MOSFETs by introducing various interfacial layers, such as SiO 2 , GeO 2 , and Ge nitride, to prevent reactions between the high-gate oxide and the Ge substrate.…”

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confidence: 99%

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Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Chung

Seo

Long

et al. 2008

Applied Physics Letters

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Defect states in HfO2 and HfSiON films deposited on Ge(100) substrates were studied by spectroscopic ellipsometry (SE) and x-ray absorption spectroscopy (XAS). In addition, structural and compositional changes in these films were examined via medium energy ion scattering (MEIS). SE and XAS experiments revealed two distinct band edge defect states, located at 1.7±0.1eV and at 2.7±0.1 below the conduction band edges of these films. The number of defect states in HfO2 increased noticeably following postdeposition annealing (PDA), whereas in HfSiON, it showed only small increases following the same treatment. MEIS measurements showed that Ge diffusion into HfO2 films was enhanced significantly by PDA as well; however, this effect was less pronounced in the HfSiON films. The suppression of defect state enhancement in HfSiON films was correlated with lower levels of Ge diffusion and increased structural stability with respect to HfO2.

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confidence: 99%

mentioning

confidence: 99%

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Chung

Seo

Long

et al. 2008

Applied Physics Letters

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“…Despite of the successful realization of Ge based MOSFET 2 and numerous improvements concerning MOS capacitors, the device performance reported is still below theoretical predictions, mainly due to insufficient Ge/oxide interface passivation. 3 However, several very capable approaches for Ge surface passivation techniques have been reported, [3][4][5] and superior electrical behavior of the dielectrics by use of atomic layer deposition ͑ALD͒ on interfacial GeO 2 has been observed. 6 Capacitance-voltage ͑C-V͒ measurements are eminently suited to characterize MOS capacitors.…”

Section: Process Temperature Dependent High Frequency Capacitance-volmentioning

confidence: 99%

“…Nevertheless, it has been speculated that an efficient minority carrier generation by interface charge trapping may degrade the channel carrier mobility due to scattering. 5 Since the role of the high-k/Ge interface on the C-V response is crucial and the interface itself is process determined, in this letter, we investigate the impact of the deposition temperature on the electrical properties of ZrO 2 dielectrics grown by ALD.…”

Section: Process Temperature Dependent High Frequency Capacitance-volmentioning

confidence: 99%

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

Bethge

Abermann

Henkel

et al. 2010

Applied Physics Letters

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ZrO 2 / GeO 2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 μs. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.

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“…Alternative channel materials such as germanium (Ge) [1, 2] and III-V materials [3–5] have recently attracted a great deal of interest for high-performance logic device applications. Among them, Ge has the potential to replace silicon as the channel material in MOSFET because of its intrinsic higher hole carrier mobility [6].…”

Section: Introductionmentioning

confidence: 99%

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Cao

et al. 2017

Nanoscale Res Lett

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In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10−3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

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Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

Cited by 133 publications

References 29 publications

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

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