Sulfur is easy to be incorporated into ZnO nanoparticles by the solution-combustion method. Herein, the magnetic and adsorption properties of a series of ZnOS (x = 0, 0.05, 0.1, 0.15, and 0.2) nanoparticles were systematically investigated. The X-ray diffraction patterns show that the as-prepared ZnOS nanoparticles have the hexagonal wurtzite structure of ZnO with a low sulfur content that gradually transforms into the zinc blende structure of ZnS when the x value is greater than 0.1. PL spectra show several bands due to different transitions, which have been explained by the recombination of free excitons or defect-induced transitions. The introduction of sulfur not only modifies the bandgap of ZnO, but also impacts the concentration of Zn vacancies. The as-prepared ZnO shows weak room-temperature ferromagnetism, and the incorporation of sulfur improves the ferromagnetism owing to the increased concentration of Zn vacancies, which may be stabilized by the doped sulfur ions. The adsorption capability of ZnOS nanoparticles has been significantly improved, and the process can be well described by the pseudo-first-order kinetic model and the Freundlich isotherm model. The mechanism has been confirmed to be due to the active sulfate groups existing in zinc oxysulfide nanoparticles.

Co3O4 nanolayers have been successfully deposited on a flexible carbon nanotubes/carbon cloth (CC) substrate by atomic layer deposition. Much improved capacitance and ultra-long cycling life are achieved when the CNTs@Co3O4/CC is tested as a supercapacitor electrode. The improvement can be from the mechanically robust CC/CNTs substrate, the uniform coated high capacitance materials of Co3O4 nanoparticles, and the unique hierarchical structure. The flexible electrode of CNTs@Co3O4/CC with high areal capacitance and excellent cycling ability promises great potential for developing high-performance flexible supercapacitors.

A novel photocatalyst of Ta-doped ZnO nanoparticles was prepared by a modified Pechini-type method. The antimicrobial study of Ta-doped ZnO nanoparticles on several bacteria of Gram-positive Bacillus subtilis (B. subtilis) and Staphylococcus aureus (S. aureus) and Gram-negative Escherichia coli (E. coli) and Pseudomonas aeruginosa (P. aeruginosa) were performed using a standard microbial method. The Ta-doping concentration effect on the minimum inhibitory concentration (MIC) of various bacteria under dark ambient has been evaluated. The photocatalytical inactivation of Ta-doped ZnO nanoparticles under visible light irradiation was examined. The MIC results indicate that the incorporation of Ta5+ ions into ZnO significantly improve the bacteriostasis effect of ZnO nanoparticles on E. coli, S. aureus, and B. subtilis in the absence of light. Compared to MIC results without light irradiation, Ta-doped ZnO and pure ZnO nanoparticles show much stronger bactericidal efficacy on P. aeruginosa, E. coli, and S. aureus under visible light illumination. The possible antimicrobial mechanisms in Ta-doped ZnO systems under visible light and dark conditions were also proposed. Ta-doped ZnO nanoparticles exhibit more effective bactericidal efficacy than pure ZnO in dark ambient, which can be attributed to the synergistic effect of enhanced surface bioactivity and increased electrostatic force due to the incorporation of Ta5+ ions into ZnO. Based on the antibacterial tests, 5 % Ta-doped ZnO is a more effective antimicrobial agent than pure ZnO.

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 103 cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.